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企業・研究機関Company / Institute · アメリカUSA · 2022–2026 LIVE

Western Digital

アメリカUSA 32位 (0 pt) · 世界World 28位 (0 pt) · 対象論文Papers 5

年別の推移Papers per year

会議・論文誌別の論文数（フルカウント）Papers per venue (full count)

0122022 ISSCC: 12022 JSSC: 1220222023 VLSI: 12023 JSSC: 12202320242025 ISSCC: 1120252026
ISSCCVLSIJSSC
数値表を表示Show table
会議・論文誌Venue20222023202420252026
ISSCC1––1–
VLSI–1–––
JSSC11–––

会議・論文誌別By venue

順位はフルカウントでの値です。Ranks use the full count.

会議・論文誌VenueフルFull 筆頭First按分Frac. 順位Rank
ISSCC Tier 1211.21アメリカUSA #14 · 世界World #52
VLSI Tier 1100.25アメリカUSA #14 · 世界World #48
JSSC Tier 1210.95アメリカUSA #16 · 世界World #66
CICC Tier 2000.00–
A-SSCC Tier 2000.00–
ESSERC Tier 2000.00–

対象論文Papers

太字はこの機関の所属として確認できた著者です。Bold: authors affiliated with this institution.

  1. ISSCC
    2025
    A 1Tb 3b/cell 3D-Flash Memory with a 29%-Improved-Energy-Efficiency Read Operation and 4.8Gb/s Power-Isolated Low-Tapped-Termination I/Os
    DOI
    Kosuke Yanagidaira, Mario Sako, Yasuhiro Hirashima, Junya Matsuno, Yumi Higashi, Yutaka Shimizu, Akihiro Imamoto, Kazuaki Kawaguchi, Koji Tabata, Takeshi Nakano, Yusuke Ochi, Hiroaki Hoshino, Takeshi Hioka, Shigehito Saigusa, Hiroki Date, Masaki Unno, Jumpei Sato, You Kamata, Hardwell Chibvongodze, Naoki Ojima, Hiroshi Sugawara, Masahiro Kano, Jang-woo Lee, Hiroyuki Mizukoshi, Ryuji Yamashita, Kensaku Abe, Naohito Morozumi, In-Soo Yoon, Takuya Ariki, Jong Hak Yuh, Khin Htoo, Yosuke Kato, Yoshihisa Watanabe, Toshiyuki Kouchi
    キオクシアKioxia · Western Digital
  2. JSSC
    2023
    A 1-Tb 4-b/cell 4-Plane 162-Layer 3-D Flash Memory With 2.4-Gb/s IO Interface
    DOI
    Jong Hak Yuh, Yen-Lung Jason Li, Heguang Li, Yoshihiro Oyama, Cynthia Hsu, Pradeep Anantula, Gwang Yeong Stanley Jeong, Anirudh Amarnath, Siddhesh Darne, Sneha Bhatia, Tianyu Tang, Aditya Arya, Naman Rastogi, Naoki Ookuma, Hiroyuki Mizukoshi, Alex Yap, Demin Wang, Steve Kim, Yonggang Wu, Min Peng, Jason Lu, Tommy Ip, Seema Malhotra, Taekeun Han, Masatoshi Okumura, Jiwen Liu, Jeongduk John Sohn, Hardwell Chibvongodze, Muralikrishna Balaga, Akihiro Matsuda, Chen Chen, Indra K. V., V. S. N. K. Chaitanya G., Venky Ramachandra, Yosuke Kato, Ravi J. Kumar, Huijuan Wang, Farookh Moogat, In-Soo Yoon, Kazushige Kanda, Takahiro Shimizu, Noboru Shibata, Kosuke Yanagidaira, Takuyo Kodama, Ryo Fukuda, Yasuhiro Hirashima, Mitsuhiro Abe
    Western Digital · キオクシアKioxia
  3. VLSI
    2023
    A 1Tb 3b/Cell 3D-Flash Memory of more than 17Gb/mm2 bit density with 3.2Gbps interface and 205MB/s program throughput
    DOI
    M. Sako, T. Nakajima, F. Kono, T. Nakano, M. Fujiu, J. Musha, D. Nakamura, N. Kanagawa, Y. Shimizu, K. Yanagidaira, T. Utsumi, T. Kawano, Y. Hosomura, H. Yabe, M. Kano, H. Sugawara, A. H. Sravan, K. Hayashi, T. Kouchi, Y. Watanabe
    キオクシアKioxia · Western Digital
  4. ISSCC
    2022
    A 1-Tb 4b/Cell 4-Plane 162-Layer 3D Flash Memory With a 2.4-Gb/s I/O Speed Interface
    DOI
    Jong Yuh, Jason Li, Heguang Li, Yoshihiro Oyama, Cynthia Hsu, Pradeep Anantula, Stanley Jeong, Anirudh Amarnath, Siddhesh Darne, Sneha Bhatia, Tianyu Tang, Aditya Arya, Naman Rastogi, Naoki Ookuma, Hiroyuki Mizukoshi, Alex Yap, Demin Wang, Steve Kim, Yonggang Wu, Min Peng, Jason Lu, Tommy Ip, Seema Malhotra, David Han, Masatoshi Okumura, Jiwen Liu, John Sohn, Hardwell Chibvongodze, Muralikrishna Balaga, Aki Matsuda, Chakshu Puri, Chen Chen, Indra K V, Chaitanya G, Venky Ramachandra, Yosuke Kato, Ravi Kumar, Huijuan Wang, Farookh Moogat, In-Soo Yoon, Kazushige Kanda, Takahiro Shimizu, Noboru Shibata, Takashi Shigeoka, Kosuke Yanagidaira, Takuyo Kodama, Ryo Fukuda, Yasuhiro Hirashima, Mitsuhiro Abe
    Western Digital · キオクシアKioxia
  5. JSSC
    2022
    An Embedded nand Flash-Based Compute-In-Memory Array Demonstrated in a Standard Logic Process
    DOI
    Minsu Kim, Muqing Liu, Luke R. Everson, Chris H. Kim
    University of Minnesota · SK hynix · Western Digital · Broadcom