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VLSI · 2022–2026 LIVE

Georgia Institute of Technology

対象論文Papers 10 · 筆頭著者first author 7 · 著者按分fractional 6.73 · アメリカUSA #4 · 世界World #20

所属著者Affiliated authors

ORCID が一致する著者は同一人物としてまとめています。それ以外は表記ごとに別人として扱います。Authors sharing an ORCID are merged; other spellings are listed separately.

順位Rank著者Author論文数Papers
1Arijit Raychowdhury ORCID6
2Shota Konno ORCID3
3Brian Crafton ORCID2
3Muya Chang ORCID2
3Samuel D. Spetalnick ORCID2
3Sigang Ryu2
3Zachary J. Ellis2
8Adou Sangbone Assoa1
8Anupam Golder ORCID1
8Ashwin S. Lele1
8Che-Kai Liu ORCID1
8Coleman DeLude ORCID1
8Connor Talley1
8Hikmet Seha Ozturk ORCID1
8Hongwu Jiang ORCID1
8Justin Romberg ORCID1
8Kevin Patino-Sosa1
8Meng-Fan Chang ORCID1
8Minxiang Gong ORCID1
8Nealson Li1
8Shanshi Huang ORCID1
8Shimeng Yu ORCID1
8Taeryoung Seol ORCID1
8Visvesh S. Sathe ORCID1
8Visvesh Sathe1
8Wantong Li ORCID1
8Young-Seok Noh ORCID1

対象論文Papers

  1. VLSI
    2026
    A 1V Time-Division-Multiplexed 4-Channel 3 ${ }^{\text{rd}}$-Order NS-SAR ADC with 178.8dB FoM $\mathrm{M}_{\text{DR}}$ and $\text{5.8G} {\Omega}$ Input Impedance for Wearable Dry-Contact Biopotentials
    DOI
    Geunha Kim, Sehwan Lee, Taeryoung Seol, Kyuhyeon Park, Jeongyoon Wie, Minoo Lee, Seokhan Jeong, Yeonjae Shin, Sangkyu Lee, Byeongwoo Koo, Michael Choi, Junghyup Lee
    Daegu Gyeongbuk Institute of Science and Technology · Samsung · Georgia Institute of Technology
  2. VLSI
    2026
    An 8-Element 200-MHz Bandwidth Oversampling Digital Slepian Beamformer
    DOI
    Zhengqi Xu, Zhiyuan Zhao, Coleman DeLude, Justin Romberg, Michael Flynn
    University of Michigan · Georgia Institute of Technology
  3. VLSI
    2026
    Event-Gaze: A 28nm 441μs-Latency 12.88mW SoC for Sparse-Event-Based Dynamic Eye Tracking and Gaze Estimation in XR
    DOI
    Nealson Li, Che-Kai Liu, Zachary J. Ellis, Connor Talley, Young-Seok Noh, Kevin Patino-Sosa, Visvesh Sathe, Arijit Raychowdhury
    Georgia Institute of Technology
  4. VLSI
    2026
    Unified Digital Thermal-Voltage Sensor for Thermal Management in Intel 18A/Intel 3
    DOI
    Shanshan Xie, Gregory K. Chen, Phil C. Knag, Hikmet Seha Ozturk, Visvesh S. Sathe, Carlos Tokunaga, James W. Tschanz
    Intel · Georgia Institute of Technology
  5. VLSI
    2024
    A 28nm Approximate / Binary 6T CAM for Sequence Alignment
    DOI
    Brian Crafton, Samuel D. Spetalnick, Muya Chang, Arijit Raychowdhury
    Georgia Institute of Technology
  6. VLSI
    2024
    A 65nm Delta-Sigma ADC Based VDD-Variation-Tolerant Power-Side-Channel-Attack Monitor with Detection Capability Down to 0.25Ω
    DOI
    Shota Konno, Zachary J. Ellis, Anupam Golder, Sigang Ryu, Daniel Dinu, Avinash Varna, Sanu Mathew, Arijit Raychowdhury
    Georgia Institute of Technology · Intel
  7. VLSI
    2023
    A 2.38 MCells/mm2 9.81 -350 TOPS/W RRAM Compute-in-Memory Macro in 40nm CMOS with Hybrid Offset/IOFF Cancellation and ICELL RBLSL Drop Mitigation
    DOI
    Samuel D. Spetalnick, Muya Chang, Shota Konno, Brian Crafton, Ashwin S. Lele, Win-San Khwa, Yu-Der Chih, Meng-Fan Chang, Arijit Raychowdhury
    Georgia Institute of Technology · TSMC
  8. VLSI
    2023
    A 65nm 60mW Dual-Loop Adaptive Digital Beamformer with Optimized Sidelobe Cancellation and On-Chip DOA Estimation for mm-Wave Applications
    DOI
    Sigang Ryu, Adou Sangbone Assoa, Shota Konno, Arijit Raychowdhury
    Georgia Institute of Technology
  9. VLSI
    2022
    A 40nm Analog-Input ADC-Free Compute-in-Memory RRAM Macro with Pulse-Width Modulation between Sub-arrays
    DOI
    Hongwu Jiang, Wantong Li, Shanshi Huang, Shimeng Yu
    Georgia Institute of Technology
  10. VLSI
    2022
    A 90.4% Peak Efficiency 48V/1V Three-Level Hybrid Dickson Converter with Gradient Descent Run-Time Optimizer and GaN/Si Hybrid Conversion
    DOI
    Minxiang Gong, Xin Zhang, Arijit Raychowdhury
    Georgia Institute of Technology · IBM