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企業・研究機関Company / Institute · 日本Japan · 2022–2026 LIVE

キオクシアKioxia

Kioxia

日本Japan 4位 (46 pt) · 世界World 28位 (0 pt) · 対象論文Papers 10

年別の推移Papers per year

会議・論文誌別の論文数(フルカウント)Papers per venue (full count)

01232022 ISSCC: 12022 JSSC: 12022 ESSERC: 1320222023 VLSI: 12023 JSSC: 12023 A-SSCC: 13202320242025 ISSCC: 2220252026 ISSCC: 12026 JSSC: 122026
ISSCCVLSIJSSCA-SSCCESSERC
数値表を表示Show table
会議・論文誌Venue20222023202420252026
ISSCC1––21
VLSI–1–––
JSSC11––1
A-SSCC–1–––
ESSERC1––––

会議・論文誌別By venue

順位はフルカウントでの値です。Ranks use the full count.

会議・論文誌VenueフルFull 筆頭First按分Frac. 順位Rank
ISSCC Tier 1421.61日本Japan #4 · 世界World #30
VLSI Tier 1110.75日本Japan #9 · 世界World #48
JSSC Tier 1321.73日本Japan #4 · 世界World #47
CICC Tier 2000.00–
A-SSCC Tier 2111.00日本Japan #3 · 世界World #25
ESSERC Tier 2111.00日本Japan #1 · 世界World #41

対象論文Papers

太字はこの機関の所属として確認できた著者です。Bold: authors affiliated with this institution.

  1. ISSCC
    2026
    A 2Tb 4b/Cell 6-Plane 3D-Flash Memory with 37.6Gb/mm 2 Bit Density and >85MB/s Write Throughput
    DOI
    Jayanth M. Thimmaiah, Ryuji Yamashita, In-Soo Yoon, Jason Li, Cynthia Hsu, Takuya Ariki, Naoki Ookuma, Yosuke Kato, Koichiro Hayashi, Kazuki Yamauchi, Indra K V, Masahiro Kano, Sirisha Bhamidipati, Sneha Bhatia, Seema Malhotra, Naoki Ojima, Ella Wu, Zhiyong Yang, Frank W. Tsai, Mathias Bayle, Naoyuki Minami, Yasuyuki Fujihara, Kei Kitamura, Tomofumi Kitani, Takuyo Kodama, Takaya Handa, Naoaki Kanagawa, Yuki Ishizaki, Susumu Fujimura, Yoshinao Suzuki, Mario Sako, Yumi Higashi, Yoshihisa Watanabe, Toshiyuki Kouchi, Aravinth V, Chin-Yi Chen, Xiang Yang, Guirong Liang, Jenny Wang
    Western Digital / Sandisk(日本拠点)Western Digital / Sandisk Japan · キオクシアKioxia
  2. JSSC
    2026
    A 29-Gb/mm 2 1-Tb 3-b/Cell 3-D Flash Memory With CMOS Direct Bonded Array (CBA) Technology
    DOI
    Kosuke Yanagidaira, Mario Sako, Yasuhiro Hirashima, Yumi Higashi, Yutaka Shimizu, Takeshi Nakano, Yusuke Ochi, Hiroaki Yamada, Nobushi Matsuura, Akihiro Imamoto, Kazuaki Kawaguchi, Koji Tabata, Hiroaki Hoshino, Takeshi Hioka, Shigehito Saigusa, Hiroki Date, Masaki Unno, Jumpei Sato, You Kamata, Takahiro Shimizu, Akio Sugahara, Taira Shibuya, Atsushi Okuyama, Junji Yamada, Takatoshi Minamoto, Hardwell Chibvongodze, Naoki Ojima, Hiroshi Sugawara, Masahiro Kano, Jang-Woo Lee, Hiroyuki Mizukoshi, Ryuji Yamashita, Kensaku Abe, Naohito Morozumi, In-Soo Yoon, Takuya Ariki, Jong Hak Yuh, Khin Htoo, Yosuke Kato, Yoshihiro Oyama, Yen-Lung Jason Li, Yoshihisa Watanabe, Toshiyuki Kouchi, Koji Hosono
    キオクシアKioxia · Western Digital / Sandisk(日本拠点)Western Digital / Sandisk Japan
  3. ISSCC
    2025
    30.6 A 64Gb DDR4 STT-MRAM Using a Time-Controlled Discharge-Reading Scheme for a .001681\mu\mathrm{m}$ 1T-1MTJ Cross-Point Cell
    DOI
    Kosuke Hatsuda, Katsuhiko Hoya, Ryousuke Takizawa, Fumiyoshi Matsuoka, Takaya Yasuda, Akira Katayama, Tadashi Miyakawa, Kazuyo Senju, Kazuki Okawa, Yuka Furukawa, Yu Shimada, Katsuya Kotake, Sayaka Hirokawa, Min Chul Shin, Dong Keun Kim, Tae Ho Kim, Kyunghoon Kim, Hisanori Aikawa, Jeonghwan Song, Toshihiko Nagase, Soo Man Seo, Soo Gil Kim, Seon Yong Cha
    キオクシアKioxia · SK hynix
  4. ISSCC
    2025
    A 1Tb 3b/cell 3D-Flash Memory with a 29%-Improved-Energy-Efficiency Read Operation and 4.8Gb/s Power-Isolated Low-Tapped-Termination I/Os
    DOI
    Kosuke Yanagidaira, Mario Sako, Yasuhiro Hirashima, Junya Matsuno, Yumi Higashi, Yutaka Shimizu, Akihiro Imamoto, Kazuaki Kawaguchi, Koji Tabata, Takeshi Nakano, Yusuke Ochi, Hiroaki Hoshino, Takeshi Hioka, Shigehito Saigusa, Hiroki Date, Masaki Unno, Jumpei Sato, You Kamata, Hardwell Chibvongodze, Naoki Ojima, Hiroshi Sugawara, Masahiro Kano, Jang-woo Lee, Hiroyuki Mizukoshi, Ryuji Yamashita, Kensaku Abe, Naohito Morozumi, In-Soo Yoon, Takuya Ariki, Jong Hak Yuh, Khin Htoo, Yosuke Kato, Yoshihisa Watanabe, Toshiyuki Kouchi
    キオクシアKioxia · Western Digital
  5. A-SSCC
    2023
    A 6.4Gbps/pin NAND Flash Memory Multi-Chip Package Employing a Frequency Multiplying Bridge Chip for Scalable Performance and Capacity Storage Systems
    DOI
    Shinichi Ikeda, Akira Iwata, Goichi Otomo, Tomoaki Suzuki, Hiroaki Iijima, Mikio Shiraishi, Shinya Kawakami, Masatomo Eimitsu, Yoshiki Matsuoka, Kiyohito Sato, Shigehiro Tsuchiya, Yoshinori Shigeta, Takuma Aoyama
    キオクシアKioxia
  6. JSSC
    2023
    A 1-Tb 4-b/cell 4-Plane 162-Layer 3-D Flash Memory With 2.4-Gb/s IO Interface
    DOI
    Jong Hak Yuh, Yen-Lung Jason Li, Heguang Li, Yoshihiro Oyama, Cynthia Hsu, Pradeep Anantula, Gwang Yeong Stanley Jeong, Anirudh Amarnath, Siddhesh Darne, Sneha Bhatia, Tianyu Tang, Aditya Arya, Naman Rastogi, Naoki Ookuma, Hiroyuki Mizukoshi, Alex Yap, Demin Wang, Steve Kim, Yonggang Wu, Min Peng, Jason Lu, Tommy Ip, Seema Malhotra, Taekeun Han, Masatoshi Okumura, Jiwen Liu, Jeongduk John Sohn, Hardwell Chibvongodze, Muralikrishna Balaga, Akihiro Matsuda, Chen Chen, Indra K. V., V. S. N. K. Chaitanya G., Venky Ramachandra, Yosuke Kato, Ravi J. Kumar, Huijuan Wang, Farookh Moogat, In-Soo Yoon, Kazushige Kanda, Takahiro Shimizu, Noboru Shibata, Kosuke Yanagidaira, Takuyo Kodama, Ryo Fukuda, Yasuhiro Hirashima, Mitsuhiro Abe
    Western Digital · キオクシアKioxia
  7. VLSI
    2023
    A 1Tb 3b/Cell 3D-Flash Memory of more than 17Gb/mm2 bit density with 3.2Gbps interface and 205MB/s program throughput
    DOI
    M. Sako, T. Nakajima, F. Kono, T. Nakano, M. Fujiu, J. Musha, D. Nakamura, N. Kanagawa, Y. Shimizu, K. Yanagidaira, T. Utsumi, T. Kawano, Y. Hosomura, H. Yabe, M. Kano, H. Sugawara, A. H. Sravan, K. Hayashi, T. Kouchi, Y. Watanabe
    キオクシアKioxia · Western Digital
  8. ESSERC
    2022
    A 56-Gb/s PAM4 Transceiver with False-Lock-Aware Locking Scheme for Mueller-Müller CDR
    DOI
    Fumihiko Tachibana, Huy Cu Ngo, Go Urakawa, Takashi Toi, Mitsuyuki Ashida, Yuta Tsubouchi, Mai Nozawa, Junji Wadatsumi, Hiroyuki Kobayashi, Jun Deguchi
    キオクシアKioxia
  9. ISSCC
    2022
    A 1-Tb 4b/Cell 4-Plane 162-Layer 3D Flash Memory With a 2.4-Gb/s I/O Speed Interface
    DOI
    Jong Yuh, Jason Li, Heguang Li, Yoshihiro Oyama, Cynthia Hsu, Pradeep Anantula, Stanley Jeong, Anirudh Amarnath, Siddhesh Darne, Sneha Bhatia, Tianyu Tang, Aditya Arya, Naman Rastogi, Naoki Ookuma, Hiroyuki Mizukoshi, Alex Yap, Demin Wang, Steve Kim, Yonggang Wu, Min Peng, Jason Lu, Tommy Ip, Seema Malhotra, David Han, Masatoshi Okumura, Jiwen Liu, John Sohn, Hardwell Chibvongodze, Muralikrishna Balaga, Aki Matsuda, Chakshu Puri, Chen Chen, Indra K V, Chaitanya G, Venky Ramachandra, Yosuke Kato, Ravi Kumar, Huijuan Wang, Farookh Moogat, In-Soo Yoon, Kazushige Kanda, Takahiro Shimizu, Noboru Shibata, Takashi Shigeoka, Kosuke Yanagidaira, Takuyo Kodama, Ryo Fukuda, Yasuhiro Hirashima, Mitsuhiro Abe
    Western Digital · キオクシアKioxia
  10. JSSC
    2022
    A 25.6-Gb/s Interface Employing PAM-4-Based Four-Channel Multiplexing and Cascaded Clock and Data Recovery Circuits in Ring Topology for High-Bandwidth and Large-Capacity Storage Systems
    DOI
    Takashi Toi, Junji Wadatsumi, Hiroyuki Kobayashi, Yutaka Shimizu, Yuji Satoh, Makoto Morimoto, Rui Ito, Mitsuyuki Ashida, Yuta Tsubouchi, Mai Nozawa, Go Urakawa, Jun Deguchi, Ryuichi Fujimoto
    キオクシアKioxia · 東芝Toshiba