VLSI · 2022–2026 LIVE

Samsung

対象論文Papers 68 · 筆頭著者first author 40 · 著者按分fractional 46.80 · 韓国Korea #1 · 世界World #1

所属著者Affiliated authors

ORCID が一致する著者は同一人物としてまとめています。それ以外は表記ごとに別人として扱います。Authors sharing an ORCID are merged; other spellings are listed separately.

順位Rank	著者Author	論文数Papers
1	Michael Choi	10
2	Jongwoo Lee ORCID	8
3	Jongshin Shin ORCID	7
4	Byeongwoo Koo	5
4	Kyomin Sohn ORCID	5
4	Sangyeop Baeck ORCID	5
4	Youngjae Cho ORCID	5
8	Hyo-Gyuem Rhew	4
8	Sungno Lee	4
10	Byoung-Joo Yoo	3
10	Dong-Hyuk Lim	3
10	Dongwook Seo	3
10	Hyochul Shin	3
10	Jaehoon Lee	3
10	Jongmi Lee	3
10	Juhyun Ko	3
10	Kyungho Lee	3
10	Sangmin Yoo	3
10	Seunghyun Oh	3
10	Sunghan Do	3
10	Wan Kim ORCID	3
10	Yong Lim ORCID	3
10	Youngmin Kim	3
10	Youngsun Oh	3
25	Bumsuk Kim	2
25	Byoung Mo Moon	2
25	Chanho Kim	2
25	Chiweon Yoon ORCID	2
25	Chiyoung Ahn	2
25	Daeyun Kim ORCID	2
25	Donghee Cho ORCID	2
25	Dongsu Kim ORCID	2
25	Eunhye Oh	2
25	Gunil Kang	2
25	Gyuseong Kang	2
25	Haechang Lee	2
25	Heewook Shin	2
25	Honggul Han	2
25	Hoon Kang	2
25	Howoo Park	2
25	Hyoungbae Ahn ORCID	2
25	Hyukjun Sung	2
25	Hyun-Gi Seok ORCID	2
25	Hyunchul Yoon ORCID	2
25	Hyungjong Ko	2
25	Hyunjin Shin	2
25	Il-Pyeong Hwang	2
25	Inhak Lee	2
25	Jaemin Hong	2
25	Jahoon Jin ORCID	2
25	Jesuk Lee	2
25	Ji-Seon Paek ORCID	2
25	Jinwoo Park	2
25	Jisun Lee	2
25	Jongpil Cho	2
25	Joonsuk Kim ORCID	2
25	Jun-Hyeok Yang	2
25	Jun-Suk Bang	2
25	Jung-June Park	2
25	Jungho Lee ORCID	2
25	Junhyeong Kim	2
25	Junsang Park	2
25	Kiryong Kim ORCID	2
25	Kwonwoo Kang ORCID	2
25	Kyoung-Jun Moon	2
25	Kyunghoon Lee	2
25	Mijoung Kim	2
25	Mijung Kim	2
25	Min-Sun Keel ORCID	2
25	Minjae Lee ORCID	2
25	Moon-Ki Jung	2
25	Sang-Hune Park	2
25	SangJoon Hwang	2
25	Sanghoon Baek	2
25	Sangkyu Lee	2
25	Sangpil Nam	2
25	Sei Seung Yoon	2
25	Sinyoung Kim	2
25	Sohee Hwang	2
25	Sumin Kang	2
25	Sunkyu Lee	2
25	Wonjun Jung	2
25	Woongtaek Lim	2
25	Young-Gu Jin	2
25	Young-Ho Choi	2
25	Young-Hun Seo	2
25	Youngkyun Jeong	2
25	Youngmin Jo	2
25	Younmee Bae	2
25	Yunrong Li	2
91	Anil Kavala	1
91	Baekmin Lim	1
91	Bogyeong Kang	1
91	Bohdan Karpinskyy	1
91	Bok-Yeon Won	1
91	Bokyeon Won	1
91	Bomin Joo	1
91	Bumjun Kim	1
91	Bumsik Chung ORCID	1
91	Byeongbae Lee	1
91	Byeori Han	1
91	Byoungjoong Kang	1
91	Byung-su Kim	1
91	Byungho Yook	1
91	Byungkwan Chun	1
91	Chan-Hong Park	1
91	Chanbin Ko	1
91	Chang Soo Yoon	1
91	Chang-Young Lee	1
91	Changbeom Kim	1
91	Changhoon Do	1
91	Changsik Shin	1
91	Changsik Yoo	1
91	Changsu Sim	1
91	Changyeon Yu	1
91	Changyoung Lee	1
91	Chanho Lee	1
91	Chanjin Park	1
91	Chankeun Kwon	1
91	Cheolhui Lee	1
91	Cheonhoo Jeon ORCID	1
91	Chisung Bae	1
91	Dae-seong Lee	1
91	DaeHan Han	1
91	Daehee Bae ORCID	1
91	Daeho Kim	1
91	Daehoon Na ORCID	1
91	Daehyun Jang	1
91	Daeshik Kim	1
91	Dajung Cho	1
91	Dalhee Lee	1
91	Dohui Kim	1
91	Dohun Jang	1
91	Dokyung Lim	1
91	Dong-Hak Shin	1
91	Dong-Kyu Kim ORCID	1
91	Dong-Kyu Lee	1
91	Dong-Ryeol Oh ORCID	1
91	DongHyun Kim	1
91	Donggeon Kim ORCID	1
91	Dongha Lee	1
91	Donghyun Seo	1
91	Dongil Lee	1
91	Dongin Noh	1
91	Dongku Kang	1
91	Dongsuk Lee	1
91	Dongsuk Yoo	1
91	Dongwan Ha	1
91	Dongyeon Hong	1
91	Doobock Lee	1
91	Duyong Seo	1
91	EunSeok Shin	1
91	Eung Suk Lee	1
91	Eunhye Park	1
91	Eunjung Lee	1
91	Eunsang Lee	1
91	Gapkyung Kim	1
91	Garam Kim	1
91	Geoeun Cha	1
91	Gi-Jong Sung	1
91	Gihwan Cho	1
91	Go-Eun Cha	1
91	Gunwoo Kong	1
91	Gyutae Kwon	1
91	H.W. Lim	1
91	Haesuk Lee	1
91	Han Sik Yoo	1
91	Han-Won Cho	1
91	Haneol Seo	1
91	Hangil Lee	1
91	Hankyu Lee	1
91	Hayoung Kim	1
91	Hee-Chang Hwang	1
91	Heesung Shim ORCID	1
91	Heetak Han	1
91	Heeyeon Kim	1
91	Hiroyuki Sugihara	1
91	Ho-Jin Kim ORCID	1
91	Hongjong Park	1
91	Hoonjin Bang	1
91	Hoyong Lee	1
91	Hoyoung Tang ORCID	1
91	Hwan-Seok Ku ORCID	1
91	Hwaseok Oh	1
91	Hyeokju Na	1
91	Hyeon-Jin Park	1
91	Hyeonuk Son	1
91	Hyo-Chul Shin	1
91	Hyojin Kwon	1
91	Hyojoon An	1
91	Hyongmin Lee	1
91	Hyoung Min Kim	1
91	Hyuk-Jun Kwon	1
91	Hyukbin Kwon	1
91	Hyun-Chul Park ORCID	1
91	Hyun-Chul Yoon	1
91	Hyun-chul Hwang	1
91	Hyunchaul Jeong	1
91	Hyungdong Roh	1
91	Hyungmin Jin	1
91	Hyunjin Kwon	1
91	Hyunjun Kim	1
91	Hyunsub Norbert Rie	1
91	Hyunsung Jung	1
91	Hyuntaek Jung	1
91	Hyunwoo Ko	1
91	Hyunyoon Cho	1
91	Ik Joo Lee	1
91	Ik-Hwan Kim	1
91	Iljin Lee	1
91	In-Cheol Nam	1
91	Inbok Cho	1
91	Incheol Nam	1
91	Inho Song	1
91	Inhwan Cho	1
91	Injun Choi ORCID	1
91	Insuk Kim	1
91	J. Park	1
91	J.-Y. Lee	1
91	Jae Hoon Lee	1
91	Jae San Kim	1
91	Jae-Eun Lee	1
91	Jae-Keun Lee	1
91	Jae-Seung Jeong ORCID	1
91	Jae-Youl Lee	1
91	Jae-Young Ko	1
91	Jae-kyu Lee	1
91	JaeHwan Kim	1
91	Jaechul Shim	1
91	Jaehong Do	1
91	Jaehong Jung ORCID	1
91	Jaehun Jeong	1
91	Jaehyeok Byun	1
91	Jaehyuk Kim	1
91	Jaehyung Sin	1
91	Jaeil An	1
91	Jaejoon Song	1
91	Jaekeun Lee	1
91	Jaeseung Choi	1
91	Jaeseung Lee	1
91	Jaewon Park	1
91	Jaeyeol Han	1
91	Jaeyoun Youn	1
91	Jaihyuk Song	1
91	Je Min Ryu	1
91	Jeong Hoan Park ORCID	1
91	Jeong-Don Ihm	1
91	Jeong-Kwang Lee	1
91	Jeonga Jo	1
91	Jeongjin Cho	1
91	Jeongkwang Lee	1
91	Jeongkyun Kim ORCID	1
91	Ji-Hun Lee ORCID	1
91	Ji-Min Choi	1
91	Jichull Jeong	1
91	Jieun Park	1
91	Jiheon Park	1
91	Jihoon Lee ORCID	1
91	Jin-Yub Lee	1
91	Jindo Byun	1
91	Jinkyeong Heo ORCID	1
91	Jisoo Lee	1
91	Jisu Kang	1
91	Jisu Yook ORCID	1
91	Jong-Shin Shin	1
91	Jong-Woo Jang	1
91	Jonghan Ahn	1
91	Jonghoon Jung	1
91	Jonghoon Myeong	1
91	Jonghoon Park	1
91	Jonghoon Shin	1
91	Jonghyuk Woo	1
91	Jonghyun Go	1
91	Joohwan Kim	1
91	JoonSeo Yim	1
91	Joonhoi Hur	1
91	Joonkyung Park	1
91	Jooyoung Lee	1
91	Jun-Ho Boo ORCID	1
91	Jung-Bong Lee	1
91	Jung-Hwan Choi ORCID	1
91	Junghwan Kwak	1
91	Jungmin Seo ORCID	1
91	Jungwook Lim	1
91	Jungyu Lee	1
91	Junseok Yang	1
91	Junseong Park	1
91	Junyoung Jang ORCID	1
91	Junyoung Park	1
91	K. Kim	1
91	K. Ryu	1
91	Keon-Woo Park	1
91	Kibaek Kwon	1
91	Kihong Kim	1
91	Kijun Lee	1
91	Kiseok Suh	1
91	Kisung Kim	1
91	Kun Jae Lee	1
91	Kun-hyuk Kang	1
91	KwanSik Kim	1
91	Kwangseob Shin	1
91	Kyeonghwan Park	1
91	Kyeongtae Nam ORCID	1
91	Kyoung-Hwan Lim	1
91	Kyoungmok Son	1
91	Kyu-Chang Kang	1
91	Kyuchang Kang	1
91	Kyung-Hoon Lee	1
91	Kyung-Min Kim	1
91	Kyunghwan Min ORCID	1
91	Kyungmin Kim	1
91	Kyungmin Lee	1
91	Kyuseong Kim	1
91	Kyuwon Choi	1
91	Manjae Yang	1
91	Masamichi Ito	1
91	Min-Soo Kim	1
91	Min-Woong Seo ORCID	1
91	Min-su Kim	1
91	Mingyu Lee	1
91	Minhee Son	1
91	Minji Jung	1
91	Minki Ahn	1
91	Minsik Kim	1
91	Minsu Jung	1
91	Mira Lee	1
91	Miri Noh	1
91	Moo-Yeol Choi	1
91	Moosung Kim	1
91	Mungyu Kim	1
91	Myeong-O Kim	1
91	Myeonggyun Kye ORCID	1
91	Myoungbo Kwak	1
91	Myoungoh Ki	1
91	Myung-Kyu Lee	1
91	Myunghan Bae ORCID	1
91	Myungjin Lee	1
91	Punghwan Lim	1
91	S. Kim	1
91	S. Yoo	1
91	Sachoun Park	1
91	Saemin Im	1
91	Sang Joon Kim ORCID	1
91	Sang-Han Lee ORCID	1
91	Sang-Ho Kim	1
91	Sang-Jun Hwang	1
91	Sang-Yun Kim	1
91	Sanggwon Lee	1
91	Sanggyeong Won	1
91	Sangho Kim	1
91	Sanghyuck Moon	1
91	Sangmin Shin	1
91	Sangseok Lee	1
91	Sangsu Park	1
91	Sangyeop Baek	1
91	Sangyun Kim	1
91	Se-Ryeong Yoon	1
91	Sehwan Lee	1
91	Sejun Jeon ORCID	1
91	Seki Kim	1
91	Seogyong Jeong ORCID	1
91	Seok Yun	1
91	Seok-Ha Lee	1
91	Seok-Yong Park	1
91	Seol-Jun Go	1
91	Seong-Eun Cho	1
91	Seung Ho Song	1
91	Seung-Chul Shin	1
91	Seung-Jin Park	1
91	Seung-Jun Bae ORCID	1
91	Seung-Sik Kim	1
91	Seungchan Park	1
91	Seunghoon Lee	1
91	Seunghwan Lee	1
91	Seunghyun Lee	1
91	Seunghyun Song	1
91	Seungjae Lee ORCID	1
91	Seungjin Kim	1
91	Seungki Jung	1
91	Seungnam Choi	1
91	Seungwan Kang	1
91	Seungyoung Bae	1
91	Sewon Ki	1
91	Shinhee Han	1
91	Shinyoung Choi	1
91	Si-Gyoung Koo	1
91	Si-Woo Kim	1
91	Siwoo Kim	1
91	Sodam Ju	1
91	Soeun Park	1
91	Soo Young Kim	1
91	Soo-Min Lee	1
91	Soohoh Seol	1
91	Soomin Ko	1
91	Soon-Won Kwon ORCID	1
91	Soonjae Won	1
91	Soonku Kang	1
91	Soyeong Shin ORCID	1
91	Su-Hyun Han ORCID	1
91	Subin Yim	1
91	Sucheol Lee	1
91	Sukhan Lee	1
91	Sukjin Jung	1
91	Suksan Kim	1
91	Sun-Jae Park	1
91	Sung Yoon Min	1
91	Sung-Chun Park	1
91	Sung-Gi Ahn	1
91	Sung-Jae Byun ORCID	1
91	Sung-No Lee	1
91	Sung-Rae Kim	1
91	Sung-Sik Park	1
91	Sungha Lee	1
91	Sunghoi Hur	1
91	Sunghye Cho	1
91	Sunghyuck Cho	1
91	Sungjae Lee	1
91	Sungyoub Jung	1
91	Sungyoung Seo	1
91	Sunhwa Lee	1
91	Sunjae Park	1
91	Susie Kim	1
91	Tae Kyu Byun	1
91	Tae-Hwang Kong	1
91	Tae-Sung Kim	1
91	Taehyeon Park	1
91	Taejin Jang	1
91	Taejoong Song ORCID	1
91	Taeksu Kwon	1
91	Taemin An	1
91	Taemin Choi	1
91	Taesub Jung	1
91	Taesung Lee	1
91	Taewook Park	1
91	Takahiro Nomiyama	1
91	Tongsung Kim	1
91	Useung Shin	1
91	W. Jang	1
91	Wonkang Kim	1
91	Woosik Kim	1
91	Y. Choi	1
91	Y. Kwak	1
91	Y. Kwon	1
91	Ye-Dam Kim ORCID	1
91	Yelim Youn	1
91	Yeong Geol Song	1
91	Yeong Ho Yun	1
91	Yeongdae Kim	1
91	Yeongmin Kim	1
91	Yeongseok Shim	1
91	Yeonho Jung	1
91	Yesin Ryu ORCID	1
91	Yeunhee Huh	1
91	Yong Ki Lee	1
91	Yong-Sik Kwak ORCID	1
91	Yong-Suk Choi	1
91	Yong-geol Kim	1
91	Yongjae Lee ORCID	1
91	Yongjin Kim	1
91	Yongjin Lee	1
91	Yongjun Kim	1
91	Yongmin Kim	1
91	Yongsoo Kim	1
91	Yongsung Ji	1
91	Youjin Choi	1
91	Youna Lee	1
91	Young-Cheon Kwon	1
91	Young-Ho Jung	1
91	Young-Hyo Park	1
91	Young-Jae Cho	1
91	Young-Seok Park	1
91	Young-Soo Sohn	1
91	Youngchan Kim	1
91	Youngdo Um	1
91	Youngdon Choi	1
91	Younggyu Lee	1
91	Younghoon Son	1
91	Younghwan Choo	1
91	Younghyo Park	1
91	Youngmin Kang	1
91	Youngo Lee ORCID	1
91	Youngsea Cho	1
91	Youngtae Jang	1
91	Yu Ho Choi	1
91	Yu Jin Cha	1
91	Yubin Kim	1
91	Yunhyeok Choi	1
91	Yunji Hong	1
91	Yuseong Jeon	1

対象論文Papers

VLSI
2026

A 12 V-to-1V Scalable 2N-Phase Buck Converter Using 0V-Stress Balancer with Shortest $I_{\mathrm{L}}$ Balancing Path for Parallel IC Expansion in xPU Systems
DOI
Young-Jun Jeon, Chan-Ho Lee, Jong-Woo Jang, Sung-Wan Hong

Sogang University · Samsung · Seoul National University
VLSI
2026

A 16 Mb 28 nm FD-SOI STT-MRAM Achieving 2.0 ns Read Access Time at 0.9 V via a PVT-Variation-Tolerant Dual-Reference Sensing Scheme
DOI
Donguk Seo, Youjin Choi, Mingyu Kim, Heeyeon Kim, Kyungjun Lee, Jaerok Kim, Donggyu Kim, Shin Han, Yoonmyung Lee

Sungkyunkwan University · Samsung
VLSI
2026

A 1V Time-Division-Multiplexed 4-Channel 3 ${ }^{\text{rd}}$-Order NS-SAR ADC with 178.8dB FoM $\mathrm{M}_{\text{DR}}$ and $\text{5.8G} {\Omega}$ Input Impedance for Wearable Dry-Contact Biopotentials
DOI
Geunha Kim, Sehwan Lee, Taeryoung Seol, Kyuhyeon Park, Jeongyoon Wie, Minoo Lee, Seokhan Jeong, Yeonjae Shin, Sangkyu Lee, Byeongwoo Koo, Michael Choi, Junghyup Lee

Daegu Gyeongbuk Institute of Science and Technology · Samsung · Georgia Institute of Technology
VLSI
2026

A 20T Low-Power Single-Phase Full-Static Contention-Free Flip-Flop with Interlatch Transistor Sharing
DOI
Minkyu Ko, Bomin Joo, Byeonggon Kang, Unbok Wi, Jieun Kim, Dalhee Lee, Changbeom Kim, Hayoung Kim, Sanghoon Baek, Bai-Sun Kong

Sungkyunkwan University · Samsung · University of California San Diego
VLSI
2026

A 3200×2880, 120Hz OLED Display Driver IC with Miller-Charge Cancellation (MCC) Achieving a $\text{13.3V} {/} {\mu}\mathrm{s}$ Slew Rate Under Worst-Case Full-Channel Load
DOI
Suyun Chae, Taeksu Kwon, Yousung Park, Insuk Kim, Yeongmin Kim, Siwoo Kim, Hyun-Sik Kim

Korea Advanced Institute of Science and Technology · Samsung
VLSI
2026

A 6.78MHz Fractional-Resonance Full-Wave Current-Mode Wireless Receiver with Real-Time SAR-Based Optimum Tracking and Power-Aware Division Control
DOI
Jong-Hun Kim, Seong-Ju Lee, Seogyong Jeong, Mun-Jung Cho, Yeon-Woo Jeong, Min-Sik Kim, Myeong-Ho Kim, Dong-Chan Lee, Min-Gyu Jeong, Geon Kim, In-Hye Hur, Eun-Jae Ko, Se-Un Shin

Pohang University of Science and Technology · Samsung
VLSI
2026

A Floating-Inverter Integrator LDO Achieving Near-Zero Line Regulation via Parasitic-Synthesized Supply-Tracking Offset
DOI
Jaehoon Lee, Yeji Min, Jae-Yoon Sim

Samsung · Pohang University of Science and Technology
VLSI
2026

A Scalable Distributed Digital LDO Achieving Fast and Accurate Current Balancing
DOI
Sang-Yun Nam, Won-Gyu Kim, Jaeseung Lee, Jun-Hyeok Yang, Sung-Wan Hong

Sogang University · Samsung · Seoul National University
VLSI
2026

An 11B Source-Driver IC with Resistor-Resistor-Embedded (RRE) DAC and Multi-Step Offset Calibration Achieving 1723 µm 2 /Channel and 1.6 mV DVO for 6285-PPI OLED-On-Silicon Displays
DOI
Chong-Hwa Bae, Hyeon-Ho Park, Wiman Yoo, Junghwan Oh, Dong-Hyun Kim, Gang-Bae Park, Mungyu Kim, Chankeun Kwon, Dongwan Ha, Jong-Seok Kim

Hanyang University · Samsung
VLSI
2026

An 80.198um 2 Compact TRNG with Bias Mitigation, Proven PVT Tolerance in 4nm
DOI
Yunhyeok Choi, Yong Ki Lee, Bohdan Karpinskyy, Jieun Park, Hyunwoo Ko, Yongsoo Kim, Taewook Park, Jisu Kang, Sungha Lee, Gapkyung Kim, Jonghoon Shin, Hyo-Gyuem Rhew

Samsung
VLSI
2026

An IEEE 802.15.4z-Compliant IR-UWB System-on-Chip with 27 dB Self-Interference Cancellation and Reconfigurable TIA for Automotive Radar and Ranging
DOI
Hyun-Gi Seok, Sinyoung Kim, Wonjun Jung, Junhyeong Kim, Eunhye Park, Yeongdae Kim, Jaekeun Lee, Sumin Kang, Jonghoon Myeong, Duyong Seo, Honggul Han, Hyeonuk Son, Junyoung Jang, Hoon Kang, Chiyoung Ahn, Hyukjun Sung, Wan Kim, Hyun-Chul Park, Chan-Hong Park, Joonsuk Kim

Samsung
VLSI
2026

Dual-Phase Offset Compensation and Conditional Latch Gating for a Fully Singleended Dram Core Data-Line Architecture Operating at 0.75 V
DOI
Chang-Young Lee, Young-Seok Park, Hyeon-Jin Park, Dong-Hak Shin, Keon-Woo Park, Se-Ryeong Yoon, Dong-Kyu Lee, Min-Soo Kim, Gi-Jong Sung, Kyu-Chang Kang, Sang-Yun Kim, Hyun-Chul Yoon, Bok-Yeon Won, In-Cheol Nam, Young-Hun Seo, Seung-Jun Bae, Young-Soo Sohn, Sang-Jun Hwang

Samsung
VLSI
2026

Robust Configurable 1.5 MHz/2.5 MHz IF Quadrature CT ΔΣ Modulator Using SAQB and QDNC for 175.4 dB FoMs in 14 Nm FinFET
DOI
Seong-Eun Cho, Ye-Dam Kim, Jongmi Lee, Yong Lim, Yong-Sik Kwak, Kyoung-Jun Moon, Sangmin Yoo

Samsung
VLSI
2025

A 1.22 e-rms Temporal Random Noise, 110 dB High Dynamic Range, 2.988 \mu\mathrm{m}$ Pixel-Pitch 3-Stacked Digital Pixel Sensor with On-Chip HDR Merger
DOI
Min-Woong Seo, Yong-Suk Choi, Sanggwon Lee, Masamichi Ito, Daehee Bae, Yeongseok Shim, Gihwan Cho, Si-Gyoung Koo, Sung-Jae Byun, Hyukbin Kwon, Suksan Kim, KwanSik Kim, Youna Lee, Bumjun Kim, Jaehun Jeong, Hiroyuki Sugihara, Su-Hyun Han, Sangsu Park, Yongjun Kim, Heesung Shim, Seung-Sik Kim, Jae-kyu Lee, Jonghyun Go, Jaihyuk Song

Samsung
VLSI
2025

A 1.2Mp 2.8 um 4-tap Indirect Time-of-Flight Sensor with 42% Quantum Efficiency at 940 nm Wavelength with Enhanced Angular Response
DOI
Seunghyun Lee, Minhee Son, Sungyoung Seo, Sunghyuck Cho, Young-Gu Jin, Youngsun Oh, Seunghyun Song, Seok-Ha Lee, DaeHan Han, Daeho Kim, Minsik Kim, Il-Pyeong Hwang, Youngkyun Jeong, Daeyun Kim, Min-Sun Keel, Juhyun Ko, Howoo Park, Kyungho Lee

Samsung
VLSI
2025

A 1.7 pJ/bit 10 MHz Calibration-Free PVT Variation and Mismatch Tolerant Latch-Based True Random Number Generator in 4 nm FinFET
DOI
Jaehoon Lee, Jongmi Lee, Yelim Youn, Yong Lim, Dongyeon Hong, Bogyeong Kang, Sangmin Yoo, Jae-Yoon Sim

Pohang University of Science and Technology · Samsung
VLSI
2025

A 12-Gb/s Single-Ended Transmitter with Echo-Canceling FFE for Multi-Drop Bus in 28Nm CMOS
DOI
KuyYoun Chung, Yubin Kim, DongArm Shin, SeongHwan Cho

Korea Advanced Institute of Science and Technology · Samsung
VLSI
2025

A 12-Mpixel Automotive Image Sensor with 137-dB Single-Exposure Dynamic Range and 0.55-Electron Read Noise by Oversampling-Based Noise Reduction
DOI
Min-Sun Keel, Kyung-Min Kim, Haneol Seo, Seok-Yong Park, Mira Lee, Donghyun Kim, Jeonga Jo, Jonghyuk Woo, Youngtae Jang, Jinkyeong Heo, Jungwook Lim, Dongsuk Yoo, Soeun Park, Youngsun Oh, Youngkyun Jeong, Bumsuk Kim, Kyungho Lee, Juhyun Ko, Haechang Lee, Jesuk Lee

Samsung
VLSI
2025

A 212.5Gb/s Pam-4 Receiver With Mutual Inductive Coupled Gm-Tia in 4nm Finfet
DOI
Kibaek Kwon, Hyungdong Roh, Kihong Kim, Dongin Noh, Woongtaek Lim, Joonkyung Park, Dokyung Lim, Dohun Jang, Punghwan Lim, Jaehong Do, Subin Yim, Dong-Hyuk Lim, Byoung-Joo Yoo, Michael Choi, Hyo-Gyuem Rhew, Jongshin Shin

Samsung
VLSI
2025

A 2Nm Gate-All-Around 128Kb Anti-Fuse One-Time Programmable Memory Featuring Dynamic Bit-Line and Sense-Amplifier Offset Cancellation
DOI
Sangmin Shin, Jaehyung Sin, Jisoo Lee, Gyutae Kwon, Sangseok Lee, Kun Jae Lee, Sewon Ki, Hyojoon An, Mijoung Kim, Hoonjin Bang, Jonghoon Jung, Sanghoon Baek

Samsung
VLSI
2025

A 4.2 Gb/S $5^{\text {th }}$ Generation F-Chip of Toggle 5.1 Specification With All-Path Speed Boosting Scheme and Sca Protocol for High Density Nand Flash Applications
DOI
Kyeonghwan Park, Jichull Jeong, Seung-Jin Park, Doobock Lee, Seunghoon Lee, Soonku Kang, Youngmin Kang, Soomin Ko, Yongjin Kim, Jun-Ho Boo, Mingyu Lee, Eunsang Lee, Geoeun Cha, Youngmin Kim, Jisun Lee, Seungwan Kang, Inbok Cho, Minjae Lee, Yongmin Kim, Seol-Jun Go, Moon-Ki Jung, Kisung Kim, Eung Suk Lee, Youngmin Jo, Jung-June Park, Chiweon Yoon, Myoungbo Kwak, Hwaseok Oh, Soonjae Won

Samsung
VLSI
2025

A 90–260 $\mathrm{V}_{\text{AC}}$ Isolated Offline Single-Stage Single-Transformer-Winding Multiple-Output (STWMO) RGBW LED Driver with <0.7% Current Variation and Dimmable Current-Regulated Error-Based Control
DOI
Mun-Jung Cho, Changsik Shin, Seung-Ju Lee, Jong-Hun Kim, Yeon-Woo Jeong, Min-Sik Kim, Myeong-Ho Kim, Hyuntak Jeon, Se-Un Shin

Pohang University of Science and Technology · Samsung · Chungbuk National University · Jeonbuk National University
VLSI
2025

A Hybrid Touch Sensing AFE with Common-CVQ (Currents, Voltages, and Charges) Subtraction to Improve Display Noise Immunity for Large Sensing Load up to 820pF
DOI
Seung Hun Choi, Jun Yeol An, Jaewoong Ahn, Jae-Youl Lee, Si-Woo Kim, Hyung-Min Lee, Yoon-Kyung Choi

Korea University · Samsung
VLSI
2025

Dial: An Energy-Efficient Dram in-Memory Computing Accelerator with Compact Partial Product Lut and Twisted Differential Adc
DOI
Soyeon Um, Sangwoo Ha, Sunjoo Whang, Minsung Kim, Byeongcheol Kim, Sangjin Kim, Junha Ryu, Chaeyun Jeong, Kyomin Sohn, Hoi-Jun Yoo

Korea Advanced Institute of Science and Technology · Samsung
VLSI
2024

A -96.5 dBm-Sensitivity, 14 dBm Peak Power, Self-Interference Resistant IR-UWB Radar Transceiver Supporting Child Presence Detection and Precision Positioning
DOI
Hyun-Gi Seok, Wan Kim, Sinyoung Kim, Jae-Keun Lee, Chanho Kim, Chanbin Ko, Junseong Park, Wonkang Kim, Jongpil Cho, Seungyoung Bae, Youngsea Cho, Wonjun Jung, Junhyeong Kim, Sumin Kang, Hyeokju Na, Byoungjoong Kang, Honggul Han, Hoon Kang, Minki Ahn, Chiyoung Ahn, Sukjin Jung, Hyukjun Sung, Seunghyun Oh, Jae-Eun Lee, Jongwoo Lee, Joonsuk Kim

Samsung
VLSI
2024

A 0.38mW 200kHz-BW 92.1dB-DR Single-Opamp 4th-Order Continuous-Time Delta-Sigma Modulator with 3rd-Order Noise Coupling
DOI
Kent Edrian Lozada, Ye-Dam Kim, Ho-Jin Kim, Youngjae Cho, Michael Choi, Seung-Tak Ryu

Korea Advanced Institute of Science and Technology · Samsung
VLSI
2024

A 12-bit 10GS/s Time-Interleaved SAR ADC with Even/Odd Channel-Correlated Absolute Error-Based Over-Nyquist Timing-Skew Calibration in 5nm FinFET
DOI
Junsang Park, Jinwoo Park, Jaemin Hong, Sunjae Park, Dongsuk Lee, Sungno Lee, Hyochul Shin, Kyunghoon Lee, Byeongwoo Koo, Youngjae Cho, Michael Choi, Jongshin Shin

Samsung
VLSI
2024

A 12-bit 16GS/s Single-Channel RF-DAC with Hybrid Segmentation for Digital Back-Off and Code-Dependent Free Switch Driver Achieving −85dBc IMD3 in 5nm FinFET
DOI
Byeongwoo Koo, Sunghan Do, Sangkyu Lee, Sangpil Nam, Heewook Shin, Saemin Im, Hyochul Shin, Sungno Lee, Junsang Park, Jungho Lee, Youngjae Cho, Michael Choi, Jongshin Shin

Samsung
VLSI
2024

A 14nm 128Mb eMRAM Implemented with 17.88Mb/mm2 at 0.60V for Auto-G1 Applications
DOI
Gyuseong Kang, Hyunjin Shin, Sanggyeong Won, Dohui Kim, Kyuseong Kim, Soohoh Seol, Sunkyu Lee, Hangil Lee, Yeonho Jung, Jaechul Shim, Kiseok Suh, Sohee Hwang, Daehyun Jang, Sangyeop Baeck, Sei Seung Yoon

Samsung
VLSI
2024

A 20Gb/s/pin Single-Ended PAM-4 Transceiver with Pre/Post-Channel Switching Jitter Compensation and DQS-Driven Biasing for Low-Power Memory Interfaces
DOI
Kyunghwan Min, Jahoon Jin, Soo-Min Lee, Sodam Ju, Jisu Yook, Jihoon Lee, Yunji Hong, Sung-Sik Park, Sang-Ho Kim, Jongwoo Lee, Hyungjong Ko

Samsung
VLSI
2024

A 5.8W, 0.00086% THD+N, 118dB PSRR Class-D Audio Amplifier with Passive Output Common-Mode Compensation Technique for Wide Output Power Range
DOI
Inhwan Cho, Moo-Yeol Choi, Jaehyeok Byun, Ji-Hun Lee, Myungjin Lee, Dongsu Kim, Jongwoo Lee

Samsung
VLSI
2024

A 96.4%-Efficiency Single-Duty-Cycled Buck-Boost Converter Achieving 1.9mV Ripple and 2.1mV Mode-Change Fluctuation for Mobile OLED Displays
DOI
Jae-Hyun Kim, Yousung Park, Doyoung Kwon, Dong-Kyu Kim, Sung-Chun Park, Yongjae Lee, Jung-Bong Lee, Hyun-Sik Kim

Korea Advanced Institute of Science and Technology · Samsung
VLSI
2024

A Temporal Noise Reduction via 40% Enhanced Conversion Gain in Dual-Pixel CMOS Image Sensor with Full-Depth Deep-Trench Isolation and Locally Lowered-Stack Technology
DOI
Seunghwan Lee, Jeongjin Cho, Shinyoung Choi, Sung Yoon Min, Eunjung Lee, Minji Jung, Kyoungmok Son, Hyunchaul Jeong, Heetak Han, Sachoun Park, Sanghyuck Moon, Seungki Jung, Junseok Yang, Taesub Jung, Howoo Park, Bumsuk Kim, Kyungho Lee, Jesuk Lee

Samsung
VLSI
2024

An Area-Efficient True Single-Phase Clocked and Conditional Capture Flip-Flop for Ultra-Low-Power Operations in 7nm Fin-FET Process
DOI
Hyun-chul Hwang, Min-su Kim, Dae-seong Lee, Yong-geol Kim, Byung-su Kim, Kun-hyuk Kang

Samsung
VLSI
2024

An Intra-Body-Power-Transfer System Energized by an Electromagnetic Energy Harvester for Powering Wearable Sensor Nodes
DOI
Hyungjoo Cho, Dongyoon Lee, Hoyong Sung, Heewon Choee, Ji-Hoon Suh, Injun Choi, Donghee Cho, Sohmyung Ha, Minkyu Je

Korea Advanced Institute of Science and Technology · Samsung · New York University Abu Dhabi
VLSI
2024

An Offset-Compensated Charge-Transfer Pre-Sensing Bit-Line Sense-Amplifier for Low-Voltage DRAM
DOI
Kyeongtae Nam, Jaehyuk Kim, Dongil Lee, Kyuchang Kang, Sangyun Kim, Changyoung Lee, Hyunchul Yoon, Donggeon Kim, Bokyeon Won, Jaejoon Song, Incheol Nam, Young-Hun Seo, Jeong-Don Ihm, Changsik Yoo, Sangjoon Hwang

Samsung
VLSI
2024

Dyamond: A 1T1C DRAM In-memory Computing Accelerator with Compact MAC-SIMD and Adaptive Column Addition Dataflow
DOI
Seongyon Hong, Wooyoung Jo, Sangjin Kim, Sangyeob Kim, Kyomin Sohn, Hoi-Jun Yoo

Korea Advanced Institute of Science and Technology · Samsung
VLSI
2023

5G NR RF PA Supply Modulator Supporting 179ns 0.5-to-5.5V Symbol Power Tracking and Envelope Tracking
DOI
Jun-Suk Bang, Dongsu Kim, Younghwan Choo, Ik-Hwan Kim, Seungchan Park, Jeongkwang Lee, Sang-Han Lee, Young-Ho Jung, Jae-Young Ko, Sungyoub Jung, Jaeyeol Han, Woosik Kim, Ji-Seon Paek, Jongwoo Lee

Samsung · Pusan National University
VLSI
2023

A 110dB-TCMRR TDM-based 8-Channel Noncontact ECG Recording IC with Suppression of Motion-Induced Coupling in <0.3s and CMI Cancellation up to 22VPP
DOI
Kyu-Jin Choi, Seungnam Choi, Jae-Yoon Sim

Pohang University of Science and Technology · Samsung
VLSI
2023

A 14nm 128Mb Embedded MRAM Macro achieved the Best Figure-Of-Merit with 80MHz Read operation and 18.1Mb/mm² implementation at 0.64V
DOI
Gyuseong Kang, Hyunjin Shin, Hyuntaek Jung, Sunkyu Lee, Jaeseung Choi, Sangyeop Baek, Hyunsung Jung, Daeshik Kim, Sohee Hwang, Shinhee Han, Yongsung Ji, Sei Seung Yoon

Samsung
VLSI
2023

A 16-channel Active-Matrix Mini-LED Driver with an USI-B for EMI noise reduction
DOI
Y. Kwon, Y. Kwak, Y. Choi, K. Kim, S. Kim, W. Jang, J. Park, K. Ryu, S. Yoo, H.W. Lim, J. Y. Lee

Samsung
VLSI
2023

A 187dB FoMS 46fJ/Conv. 2nd-order Highpass Δ∑ Capacitance-to-Digital Converter
DOI
Yoontae Jung, Sein Oh, Jimin Koo, Seunga Park, Ji-Hoon Suh, Donghee Cho, Sohmyung Ha, Minkyu Je

Korea Advanced Institute of Science and Technology · Samsung · New York University Abu Dhabi
VLSI
2023

A 2.4-to-4.2GHz 440.2fsrms-Integrated-Jitter 4.3mW Ring-Oscillator-Based PLL Using a Switched-Capacitor-Bias-Based Sampling PD in 4nm FinFET CMOS
DOI
Jaehong Jung, Kyungmin Lee, Gunwoo Kong, Baekmin Lim, Seungjin Kim, Seunghyun Oh, Jongwoo Lee

Samsung
VLSI
2023

A 3.0 Gb/s/pin 4th generation F-chip with Toggle 5.0 Specification for 16Tb NAND Flash Memory Multi chip Package
DOI
Youngmin Jo, Anil Kavala, Tongsung Kim, Byungkwan Chun, Jung-June Park, Taesung Lee, Jungmin Seo, Manjae Yang, Taehyeon Park, Hyunjin Kwon, Cheolhui Lee, Younghoon Son, Junghwan Kwak, Younggyu Lee, Hwan Seok Ku, Daehoon Na, Changyeon Yu, Jonghoon Park, JaeHwan Kim, Hyojin Kwon, Chanho Kim, Moon-Ki Jung, Chanjin Park, Donghyun Seo, Moosung Kim, Seungjae Lee, Jin-Yub Lee, Dongku Kang, Chiweon Yoon, SungHoi Hur

Samsung
VLSI
2023

A 4.0GHz UHS Pseudo Two-port SRAM with BL Charge Time Reduction and Flying Word-Line for HPC Applications in 4nm FinFET Technology
DOI
Jeongkyun Kim, Byungho Yook, Taemin Choi, Kyuwon Choi, Chanho Lee, Yunrong Li, Youngo Lee, Seok Yun, Changhoon Do, Hoyoung Tang, Inhak Lee, Dongwook Seo, Sangyeop Baeck

Samsung
VLSI
2023

A 6.5nW, -73.5dBm Sensitivity, Cryptographic Wake-Up Receiver with a PUF-based OTP and Temperature-Insensitive Code Recovery
DOI
Jaehan Park, Cheonhoo Jeon, Donggyu Minn, Heesung Roh, Jae-Yoon Sim

Pohang University of Science and Technology · Samsung
VLSI
2023

A Low-Voltage Area-Efficient TSV I/O for HBM with Data Rate up to 15Gb/s Featuring Overlapped Multiplexing Driver, ISI Compensators and QEC
DOI
Taeryeong Kim, Ji-Young Kim, Jeonghyeok You, Hohyun Chae, Byoung Mo Moon, Kyomin Sohn, Seong-Ook Jung

Yonsei University · Samsung
VLSI
2023

A Static Contention-Free Dual-Edge-Triggered Flip-Flop with Redundant Internal Node Transition Elimination for Ultra-Low-Power Applications
DOI
Sekeon Kim, Keonhee Cho, Kyeongrim Baek, Hyunjun Kim, Younmee Bae, Mijung Kim, Dongwook Seo, Sangyeop Baeck, Sungjae Lee, Seong-Ook Jung

Yonsei University · Samsung
VLSI
2023

An Indirect Time-of-Flight CMOS Image Sensor Achieving Sub-ms Motion Lagging and 60fps Depth Image from On-chip ISP
DOI
Jiheon Park, Daeyun Kim, Hoyong Lee, Seung-Chul Shin, Myoungoh Ki, Bumsik Chung, Myunghan Bae, Myeonggyun Kye, Jonghan Ahn, Inho Song, Sunhwa Lee, Jaeil An, Il-Pyeong Hwang, Taemin An, Young-Gu Jin, Youngchan Kim, Youngsun Oh, Juhyun Ko, Haechang Lee, JoonSeo Yim

Samsung
VLSI
2022

0.41-pJ/b/dB Asymmetric Simultaneous Bidirectional Transceivers With PAM-4 Forward and PAM-2 Back Channels for 5-m Automotive Camera Link
DOI
Yunhee Lee, Woonghee Lee, Minkyo Shim, Soyeong Shin, Woo-Seok Choi, Deog-Kyoon Jeong

Seoul National University · SK hynix · Samsung
VLSI
2022

4nm Voltage Auto-Tracking SRAM Pulse Generator with Fully RC Optimized Row Auto-Tracking Write Assist Circuits
DOI
Inhak Lee, Dongwook Seo, Yunrong Li, Mijoung Kim, Sangyeop Baeck

Samsung
VLSI
2022

A 0.56mW 63.6dB SNDR 250MS/s SAR ADC in 8nm FinFET
DOI
Jaehoon Lee, Yong Lim, Jongmi Lee, Taejin Jang, Kwonwoo Kang, Jongpil Cho, Seunghyun Oh, Jongwoo Lee

Samsung
VLSI
2022

A 0.7 mm2 Power Management Unit for Implantable Electroceutical Device with a 91.4 % Peak Efficiency Buck-based Hybrid Step-up and -down MISIMO Converter
DOI
Yeunhee Huh, Chisung Bae, Hankyu Lee, Sang Joon Kim

Samsung
VLSI
2022

A 12-bit 10GS/s 16-Channel Time-Interleaved ADC with a Digital Processing Timing-Skew Background Calibration in 5nm FinFET
DOI
Kyoung-Jun Moon, Dong-Ryeol Oh, Young-Hyo Park, Kyung-Hoon Lee, Sun-Jae Park, Sung-No Lee, Hee-Chang Hwang, Hyo-Chul Shin, Young-Jae Cho, Michael Choi, Jong-Shin Shin

Samsung
VLSI
2022

A 12-bit 8GS/s RF Sampling DAC with Code-Dependent Nonlinearity Compensation and Intersegmental Current-Mismatch Calibration in 5nm FinFET
DOI
Byeongwoo Koo, Sunghan Do, Sangpil Nam, Heewook Shin, Sungno Lee, Eunhye Oh, Jaemin Hong, Jungho Lee, Youngjae Cho, Michael Choi, Jongshin Shin

Samsung
VLSI
2022

A 14-nm Low Voltage SRAM with Charge-Recycling and Charge Self-Saving Techniques for Low-Power Applications
DOI
Keonhee Cho, Giseok Kim, Jisang Oh, Kiryong Kim, Changsu Sim, Younmee Bae, Mijung Kim, Sangyeop Baeck, Taejoong Song, Seong-Ook Jung

Yonsei University · Samsung
VLSI
2022

A 16 GB 1024 GB/s HBM3 DRAM with On-Die Error Control Scheme for Enhanced RAS Features
DOI
Yesin Ryu, Young-Cheon Kwon, Jae Hoon Lee, Sung-Gi Ahn, Jaewon Park, Kijun Lee, Yu Ho Choi, Han-Won Cho, Jae San Kim, Jungyu Lee, Haesuk Lee, Seung Ho Song, Je Min Ryu, Yeong Ho Yun, Useung Shin, Dajung Cho, Jeong Hoan Park, Jae-Seung Jeong, Sukhan Lee, Kyoung-Hwan Lim, Tae-Sung Kim, Kyungmin Kim, Yu Jin Cha, Ik Joo Lee, Tae Kyu Byun, Han Sik Yoo, Yeong Geol Song, Myung-Kyu Lee, Sunghye Cho, Sung-Rae Kim, Ji-Min Choi, Hyoung Min Kim, Soo Young Kim, Jaeyoun Youn, Myeong-O Kim, Kyomin Sohn, SangJoon Hwang, JooYoung Lee

Samsung
VLSI
2022

A 25.78125Gbps Bi-directional Transceiver with Framed-Pulsewidth Modulation (FPWM) for Extended Reach Optical Links in 28nm CMOS
DOI
Woohyun Kwon, Hyosup Won, Taeho Kim, Ha-Il Song, Hanho Choi, Sejun Jeon, Soon-Won Kwon, Huxian Jin, Jun-Gi Jo, Tai-Young Kim, Jake Eu, Jinho Park, Hyeon-Min Bae, Bongjin Kim

Korea Advanced Institute of Science and Technology · Samsung
VLSI
2022

A 3nm GAAFET Analog Assisted Digital LDO with High Current Density for Dynamic Voltage Scaling Mobile Applications
DOI
Seki Kim, Hyongmin Lee, Yongjin Lee, Dongha Lee, Byeongbae Lee, Jahoon Jin, Susie Kim, Miri Noh, Kwonwoo Kang, Sangho Kim, Takahiro Nomiyama, Ji-Seon Paek, Jongwoo Lee

Samsung
VLSI
2022

A 40-Gb/s/pin Low-Voltage POD Single-Ended PAM-4 Transceiver with Timing Calibrated Reset-less Slicer and Bidirectional T-Coil for GDDR7 Application
DOI
Hyunsub Norbert Rie, Chang Soo Yoon, Jindo Byun, Sucheol Lee, Garam Kim, Joohwan Kim, Junyoung Park, Hyunyoon Cho, Youngdo Um, Hyungmin Jin, Kwangseob Shin, Minsu Jung, Go-Eun Cha, Minjae Lee, YoungMin Kim, Byeori Han, Yuseong Jeon, Jisun Lee, EunSeok Shin, Hyuk-Jun Kwon, Youngdon Choi, Jung-Hwan Choi, Hyungjong Ko

Samsung
VLSI
2022

A 50 MS/s 65 dB-SNDR Pipelined SAR ADC using Capacitively Degenerated Two-Stage Dynamic Amplifier
DOI
Hyunchul Yoon, Teawoong Kim, Yigi Kwon, Youngcheol Chae

Yonsei University · Samsung
VLSI
2022

A 72GS/s, 8-bit DAC-based Wireline Transmitter in 4nm FinFET CMOS for 200+Gb/s Serial Links
DOI
Timothy Dickson, Zeynep Deniz, Martin Cochet, Marcel Kossel, Thomas Morf, Young-Ho Choi, Pier Andrea Francese, Matthias Brandli, Troy Beukema, Christian Baks, Jonathan Proesel, John Bulzacchelli, Michael Beakes, Byoung-Joo Yoo, Hyoungbae Ahn, Dong-Hyuk Lim, Gunil Kang, Sang-Hune Park, Mounir Meghelli, Hyo-Gyuem Rhew, Daniel Friedman, Michael Choi, Mehmet Soyuer, Jongshin Shin

IBM · IBM · Samsung
VLSI
2022

A Fully-Integrated 0.9W/mm2 79.1%-Efficiency 200MHz Multi-Phase Buck Converter with Flying-Capacitor-Based Inter-Inductor Current Balancing Technique
DOI
Jeong-Hyun Cho, Hong-Hyun Bae, Gyu-Wan Lim, Tae-Hwang Kong, Jun-Hyeok Yang, Hyun-Sik Kim

Korea Advanced Institute of Science and Technology · Samsung
VLSI
2022

A Low Power TSV I/O with Data Rate up to 10 Gb/s for Next Generation HBM
DOI
Ji-Young Kim, Taeryeong Kim, Jeonghyeok You, Kiryong Kim, Byoung Mo Moon, Kyomin Sohn, Seong-Ook Jung

Yonsei University · Samsung
VLSI
2022

An 8-bit 56GS/s 64x Time-Interleaved ADC with Bootstrapped Sampler and Class-AB Buffer in 4nm CMOS
DOI
A. Serdar Yonar, Pier Andrea Francese, Matthias Brandli, Marcel Kossel, Thomas Morf, Jonathan E. Proesel, Sergey Rylov, Herschel Ainspan, Martin Cochet, Zeynep Deniz, Timothy Dickson, Troy Beukema, Christian Baks, Michael Beakes, John F. Bulzacchelli, Young-Ho Choi, Byoung-Joo Yoo, Hyoungbae Ahn, Dong-Hyuk Lim, Gunil Kang, Sang-Hune Park, Mounir Meghelli, Hyo-Gyuem Rhew, Daniel Friedman, Michael Choi, Mehmet Soyuer, Jongshin Shin

ETH Zurich · IBM · IBM · Samsung
VLSI
2022

An Automotive ASIL-D Safety Mechanism in ADC and DAC for Communication Application
DOI
Kyunghoon Lee, Jinwoo Park, Younghyo Park, Byeongwoo Koo, Sunghan Do, Woongtaek Lim, Sungno Lee, Hyochul Shin, Eunhye Oh, Youngjae Cho, Michael Choi, Jongshin Shin

Samsung
VLSI
2022

Fully Integrated 2x2 MIMO Real Simultaneous Dual Band WiFi CMOS Power Amplifiers With a Single Inductor Multiple Output Supply Modulation Technique
DOI
Ji-Seon Paek, Jeong-Kwang Lee, Wan Kim, Jun-Suk Bang, Jongwoo Lee

Samsung
VLSI
2022

High Efficiency 29-/38-GHz Hybrid Transceiver Front-Ends Utilizing Si CMOS and GaAs HEMT for 5G NR Millimeter-Wave Mobile Applications
DOI
Youngmin Kim, Hongjong Park, Iljin Lee, Joonhoi Hur, Sangmin Yoo

Samsung