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VLSI · 2022–2026 LIVE

TSMC

対象論文Papers 33 · 筆頭著者first author 16 · 著者按分fractional 21.69 · 台湾Taiwan #1 · 世界World #3

所属著者Affiliated authors

ORCID が一致する著者は同一人物としてまとめています。それ以外は表記ごとに別人として扱います。Authors sharing an ORCID are merged; other spellings are listed separately.

順位Rank著者Author論文数Papers
1Tsung-Yung Jonathan Chang ORCID17
2Hung-Jen Liao9
3Win-San Khwa ORCID7
3Yu-Der Chih7
5Hong-Chen Cheng6
5Meng-Fan Chang ORCID6
7Hidehiro Fujiwara ORCID5
7Yih Wang5
9Isabel Wang4
9Yu-Hao Hsu4
11Haruki Mori ORCID3
11Quincy Li3
11Y.D. Chih3
14C.R. Hsieh2
14Cheng-En Lee2
14Ching Lin Jen2
14Frank Lee2
14Gary Chan2
14H.J. Liao2
14Harry Chuang2
14J. J. Wu2
14J.-C. Liu2
14Jhon-Jhy Liaw2
14Jonathan Chang2
14Jui-Jen Wu ORCID2
14K.C. Huang2
14Kenny Cheng-Hsiang Hsieh2
14M. F. Chang2
14Shenggao Li2
14Shien-Yang Michael Wu2
14Shu-Huan Hsu2
14Ted Chu ORCID2
14Tze-Chiang Huang2
14Yao-Yi Liu2
14Yen-Huei Chen ORCID2
14Yung-Chow Peng2
37Aditya Gayatri1
37Alex Liu1
37Amy Lai1
37An-Shun Teng1
37Atul Katoch1
37B. Pulicherla1
37B.-S. Lien1
37Bei-Shing Lien1
37Boris Bai1
37Brian Lin1
37C-E. Lee1
37C-F. Lee1
37C-J. Tsen1
37C-K. Chuang1
37C.-H. Chang1
37C.-S. Chang1
37C.C. Huang1
37C.E. Chen1
37C.F. Wang1
37C.H. Wen1
37C.W. Chan1
37C.Y. Chang1
37C.Y. Tsai1
37Carlos H. Diaz1
37Chao-Chieh Li1
37Chao-Kai Chuang1
37Chen-Wei Liang1
37Cheng-Han Lu1
37Cheng-Yin Wang1
37Chi-Shi Chen1
37Chia-Fu Lee1
37Chien-Chun Tsai1
37Chien-Yu Huang1
37Chih-Hsien Chang1
37Chih-Yu Lin1
37Chin-Ho Chang1
37Chin-I Su1
37Chin-Ming Fu1
37Chin-Shan Hou1
37Ching Wei Wu1
37Chu-En Hsia1
37Chun-Pin Lin1
37Chungi Huang1
37Derek Tao1
37Duncan Yang1
37Fred Kuo1
37Geoffrey Yeap ORCID1
37Gu-Huan Li1
37H. -L. Chiang1
37H. Fujiwara1
37H.-H. Hsieh1
37H.-S. P. Wong1
37H.H. Wang1
37H.J. Li1
37H.Y. Chen1
37Hsin-Hung Kuo1
37Hsin-Jou Chuang1
37I. P. Radu1
37J-M. Hung1
37J. Cai1
37J.-F. Wang1
37J.-J. Horng1
37J.H. Hsuen1
37Je-Min Hung ORCID1
37Jimmy Wang1
37Jordan Hsu1
37Julien Yang1
37K. Khare1
37K.-L. Cheng1
37K.-W. Su1
37K.C. Tseng1
37K.P. Chang1
37Kang-Hui Peng1
37Kate Huang1
37Kenny Hsieh1
37Kerem Akarvardar ORCID1
37Kevin Lin1
37King-Ho Tam1
37Krishna Khairnar1
37Kuo-Cheng Lin1
37Leo Liu1
37Li-Ling Luo1
37Li-Yu Yeh1
37Liang-Yi Lin1
37Lien-Jung Hung1
37M.-C. F. Chang1
37Mark Zhou1
37Mei Wong1
37Ming-Chieh Huang1
37Mu-Shan Lin1
37Muya Chang ORCID1
37Nai-Chen Cheng1
37Nian-Shyang Chang1
37Nick Zhang1
37P.W. Wang1
37Peijiun Lin1
37Perng-Fei Yuh1
37Peter Hsu1
37Ping-Sheng Wu ORCID1
37Ping-Wei Wang1
37Po-Sheng Wang ORCID1
37Po-Yi Huang1
37Po-Yu Lai1
37Robin Lee1
37S.F. Liu1
37Samsoo Kim1
37Sevic Chen1
37Shankar Kanade1
37Shaun Chou1
37Shih-Hsin Teng1
37Shu-Chun Yang1
37Szu-Lin Liu1
37Szuya Sandy Liao1
37T-L. Chou1
37T-Y. Jonathan Chang1
37T.-C. Chen1
37T.-J. Yeh1
37Tan-Li Chou1
37Tom Chen1
37Tsung-Che Lu1
37Tsung-Hsien Huang1
37W-C. Zhao1
37W.-S. Chou1
37W.F. Chen1
37W.T. Chu1
37Wan-Hsueh Cheng1
37Wei Wing Mar1
37Wei-Chang Zhao1
37Wei-Chih Chen1
37Wei-Hsiang Wang1
37Wei-Pin Changchien1
37Wei-Xiang You1
37Wen-Ching Chen1
37Wen-Hung Huang1
37Wie-Lin Lai1
37Wu-Chin Tsai1
37Y. Wang1
37Y.-C. Chen1
37Y.-C. Peng1
37Y.-W. Chen1
37Y.C. Huang1
37Y.H. Chen1
37Y.W. Ting1
37Y.W. Wang1
37Yangsyu Lin1
37Yen-Hsiang Huang1
37Yi-Chen Lu1
37Yi-Ching Liu1
37Yi-Chun Shih ORCID1
37Yi-Hsin Nien1
37Young Suk Kim1
37Yu-Cheng Lin ORCID1
37Yu-Chi Chen1
37Yu-Jie Huang1
37Yuh-Jier Mii1
37Yung-Shun Chen1
37Z.H. Ya1

対象論文Papers

  1. VLSI
    2026
    A $\mathbf{2 n m}$ 37.4 Mbit $/ \text{mm}^{2}$ Dual-Rail SRAM with Row-Access Aware Read Tracking and Write Assist Circuits Enabling 2.28 pJ/Access Energy Efficient Operation
    DOI
    Ryo Takamatsu, Makoto Yabuuchi, Masaya Hamada, Tomotaka Tanaka, Shu-Huan Hsu, Yao-Yi Liu, Yuichiro Ishii, Koji Nii, Isabel Wang, Hong-Chen Cheng, Hung-Jen Liao, Tsung-Yung Jonathan Chang
    TSMC(日本拠点)TSMC Japan · TSMC
  2. VLSI
    2026
    A $\mathbf{2 n m}$ Nanosheet $\mathbf{1 2 8 K b}$ Anti-Fuse One-Time-Programmable Memory Featuring Core-Transistor-Only High Voltage Program Circuit and Fault-Tolerant Design
    DOI
    Gu-Huan Li, Wan-Hsueh Cheng, Chen-Wei Liang, Shaun Chou, Perng-Fei Yuh, Li-Yu Yeh, Yen-Hsiang Huang, Yi-Ching Liu, Chungi Huang, Duncan Yang, Yih Wang, Tsung-Yung Jonathan Chang, Lien-Jung Hung, Ping-Wei Wang, Chin-Shan Hou, Hsin-Jou Chuang, An-Shun Teng, Li-Ling Luo, Jordan Hsu
    TSMC
  3. VLSI
    2026
    A 0.75V, 1.43%-Inaccuracy 4T MOS-Based Voltage Reference in $251 \mu \mathrm{m}^{2}$ Area
    DOI
    Szu-Lin Liu, Bei-Shing Lien, Wie-Lin Lai, Yi-Chen Lu, Ching-Lin Jen, Yung-Chow Peng, Kenny Cheng-Hsiang Hsieh
    TSMC
  4. VLSI
    2026
    A 25.3% Area-Efficient 1CPP Mask ROM with Robust Power Mesh on 2-nm NanoSheet Logic CMOS
    DOI
    Ryota Watanabe, Kazumasa Uno, Hidemitsu Kojima, Ayumu Yamada, Hiromasa Otsubo, Ted Chu, Tsung-Hsien Huang, Hong-Chen Cheng, Koji Nii, Yih Wang, Tsung-Yung Jonathan Chang
    TSMC(日本拠点)TSMC Japan · TSMC
  5. VLSI
    2026
    A 2nm 234.4 TOPS/W and 511.9 $\text{TOPS}/\text{mm}^{2}$ Digital Computing-in-Memory Compiler with Multiple MAC Units per Weight and Multiple Data Format Support
    DOI
    Hidehiro Fujiwara, Brian Crafton, Haruki Mori, Je-Min Hung, Wei-Chang Zhao, Ashwin Sanjay LeLe, Bo Zhang, Chao-Kai Chuang, Hiroaki Ishii, Cheng-En Lee, Vineet Joshi, Xiaochen Peng, Xiaoyu Sun, Shu-Huan Hsu, Yao-Yi Liu, Takeshi Hashizume, Yu-Hao Hsu, Win-San Khwa, Saman Adham, Yu-Der Chih, Yen-Huei Chen, Hung-Jen Liao, Kerem Akarvardar, Meng-Fan Chang, Tsung-Yung Jonathan Chang
    TSMC · TSMC · TSMC(日本拠点)TSMC Japan
  6. VLSI
    2026
    µAgent: A 7nm 404.3mJ/Action Edge SoC for Agentic AI Reasoning with Adaptive Block-Wise Mixed-Format 4-Bit Quantization and Decoupled Access-Execute
    DOI
    Wonsuk Jang, Christian Kubicka, Allen Pan, Pullabhatla Smriti, Win-San Khwa, Meng-Fan Chang, Priyanka Raina, Thierry Tambe
    Stanford University · TSMC
  7. VLSI
    2025
    A 13.8% Speed-Enhanced 1T Mask ROM by Algorithmically Signed Program Data on 3-nm Fin-FET Logic CMOS
    DOI
    Ryota Watanabe, Hidemitsu Kojima, Kazumasa Uno, Hiromasa Otsubo, Ted Chu, Hong-Chen Cheng, Koji Nii, Yih Wang, Tsung-Yung Jonathan Chang
    TSMC(日本拠点)TSMC Japan · TSMC
  8. VLSI
    2025
    A 22nm 41.8TFLOPS/W AI-Edge Transformer/CNN Nonvolatile-Processor Using QKV-Softmax-Layer-Fused Hybrid ReRAM-CIM and Concurrent-Transpose/Non-Transpose SRAM-CIM
    DOI
    Hung-Hsi Hsu, Win-San Khwa, Tai-Hao Wen, Wei-Ting Hsu, Yu-Chen Chang, Hsin-Yin Lu, Hua-Jin Wen, Chang-Yuan Chen, Yen-Che Huang, Chih-Ling Wu, Ping-Sheng Wu, Mon-Shu Ho, Chung-Chuan Lo, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea-Tiong Tang, Shih-Hsin Teng, Yu-Der Chih, Tsung-Yung Jonathan Chang, Meng-Fan Chang
    National Tsing Hua University · TSMC · National Chung Hsing University
  9. VLSI
    2025
    A 3nm 125 Tops/W-29 TFLOPS/W, 90 TOPS/mm2-17 TFLOPS/mm2 SRAM-Based INT8 and FP16 Digital-CIM Compiler with Multi-Weight Update/Cycle
    DOI
    Haruki Mori, J-M. Hung, W-C. Zhao, K. Khare, B. Crafton, H. Ishii, C-E. Lee, X. Peng, X. Sun, Y. Fujino, C-J. Tsen, V. Joshi, C-K. Chuang, T. Hashizume, C-F. Lee, T-L. Chou, K. Akarvardar, S. Adham, Y. Wang, H. Fujiwara, Y-D. Chih, Y-H. Chen, H-J. Liao, T-Y. Jonathan Chang
    TSMC · TSMC · TSMC(日本拠点)TSMC Japan
  10. VLSI
    2025
    A 3nm FinFET 563kbit 35.5Mbit/mm2 Dual-Rail SRAM with 3.89pJ/Access High Energy Efficient andμW/Mbit 1-Cycle Latency Low-Leakage Mode
    DOI
    Yumito Aoyagi, Makoto Yabuuchi, Tomotaka Tanaka, Kazuto Mizutani, Masaya Hamada, Yuichiro Ishii, Koji Nii, Mark Zhou, J.C. Liu, Chien-Yu Huang, Kang-Hui Peng, Yu-Hao Hsu, Isabel Wang, Hong-Chen Cheng, Hung-Jen Liao, Tsung-Yung Jonathan Chang
    TSMC(日本拠点)TSMC Japan · TSMC
  11. VLSI
    2025
    A CMOS-Compatible 12nm 8Mb MLC RRAM Enabling Producible 2-Bit Per Cell for High Energy Efficiency Compute-In-Memory in Edge AI Applications
    DOI
    C.Y. Tsai, S.F. Liu, J.H. Hsuen, Brian Lin, C.R. Hsieh, C.W. Chan, C.Y. Chang, Y.C. Huang, Julien Yang, J.J. Wu, Y.W. Chen, M.F. Chang, Y.D. Chih, W.T. Chu, K.C. Huang, Harry Chuang
    TSMC
  12. VLSI
    2025
    A Prototype 16Mbit RRAM on 55nm BCD with 56% Compact-Area Wordline Driver and Constant Write-Current Scheme for Automotive 150°C Operation
    DOI
    Kohei Santo, Masayoshi Nakayama, Reiji Mochida, Hitoshi Suwa, Motoki Tamura, Atsuo Mangyo, Koji Nii, Yu-Cheng Lin, C.F. Wang, Wu-Chin Tsai, Y.D. Chih, Tsung-Yung Jonathan Chang
    TSMC(日本拠点)TSMC Japan · TSMC
  13. VLSI
    2025
    Clo-HDnn: A 4.66 TFLOPS/W and 3.78 TOPS/W Continual On-Device Learning Accelerator with Energy-Efficient Hyperdimensional Computing via Progressive Search
    DOI
    Chang Eun Song, Weihong Xu, Keming Fan, Soumil Jain, Gopabandhu Hota, Haichao Yang, Leo Liu, Kerem Akarvardar, Meng-Fan Chang, Carlos H. Diaz, Gert Cauwenberghs, Tajana Rosing, Mingu Kang
    University of California San Diego · TSMC
  14. VLSI
    2025
    Compact, Low-Loss, Cost-Effective, CMOS Embedded RF Switch Solution Achieving DC-100GHz True-Time Delay Phase Shifter by Phase Change Material
    DOI
    H.J. Li, K.P. Chang, C.E. Chen, Y.T. Lin, C.C. Huang, Y.W. Wang, W.F. Chen, H.Y. Chen, C.R. Hsieh, Z.H. Ya, H.H. Wang, Y.W. Ting, K.C. Tseng, Z. M. Tsai, K.C. Huang, Harry Chuang
    TSMC · National Yang Ming Chiao Tung University
  15. VLSI
    2024
    A 0.296pJ/bit 17.9Tb/s/mm2 Die-to-Die Link in 5nm/6nm FinFET on a 9μm-Pitch 3D Package Achieving 10.24Tb/s Bandwidth at 16Gb/s PAM-4
    DOI
    Mu-Shan Lin, Chien-Chun Tsai, Shenggao Li, Tze-Chiang Huang, Wen-Hung Huang, Kate Huang, Yu-Chi Chen, Alex Liu, Yu-Jie Huang, Jimmy Wang, Shu-Chun Yang, Nai-Chen Cheng, Chao-Chieh Li, Hsin-Hung Kuo, Wei-Chih Chen, C.H. Wen, Kevin Lin, Po-Yi Huang, Kenny Cheng-Hsiang Hsieh, Frank Lee
    TSMC
  16. VLSI
    2024
    A 22nm Nonvolatile AI-Edge Processor with 21.4TFLOPS/W using 47.25Mb Lossless-Compressed-Computing STT-MRAM Near-Memory-Compute Macro
    DOI
    De-Qi You, Win-San Khwa, Jui-Jen Wu, Chuan-Jia Jhang, Guan-Yi Lin, Po-Jung Chen, Ting-Chien Chiu, Fang-Yi Chen, Andrew Lee, Yu-Cheng Hung, Chung-Chuan Lo, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea-Tiong Tang, Yu-Der Chih, Tsung-Yung Jonathan Chang, Meng-Fan Chang
    National Tsing Hua University · TSMC · TSMC
  17. VLSI
    2024
    A 3.3GHz 1024X640 Multi-Bank Single-Port SRAM with Frequency Enhancing Techniques and 0.55V-1.35V Wide Voltage Range Operation in 3nm FinFET for HPC Applications
    DOI
    Ming-Chieh Huang, Wei Wing Mar, Shankar Kanade, Boris Bai, Aditya Gayatri, Krishna Khairnar, Amy Lai, Yu-Hao Hsu, Hung-Jen Liao, Yih Wang, Tsung-Yung Jonathan Chang
    TSMC
  18. VLSI
    2024
    A 3nm Fin-FET 19.87-Mbit/mm2 2RW Pseudo Dual-Port 6T SRAM with High-R Wire Tracking and Sequential Access Aware Dynamic Power Reduction
    DOI
    Tomotaka Tanaka, Yuichiro Ishii, Makoto Yabuuchi, Yumito Aoyagi, Masaya Hamada, Kazuto Mizutani, Koji Nii, Hidehiro Fujiwara, Isabel Wang, Hong-Chen Cheng, Hung-Jen Liao, Tsung-Yung Jonathan Chang
    TSMC(日本拠点)TSMC Japan · TSMC
  19. VLSI
    2024
    An On-Chip Current-Sink-Free Adaptive-Timing Power Impedance Measurement (PIM) Unit for 3D-IC in 5nm FinFET Technology
    DOI
    Tsung-Che Lu, Chin-Ming Fu, Wei-Hsiang Wang, Fred Kuo, Chih-Hsien Chang, Kenny Hsieh, King-Ho Tam, Tze-Chiang Huang, Tom Chen, Mei Wong, Wei-Pin Changchien, Frank Lee
    TSMC
  20. VLSI
    2024
    Current Mirrors with Tapered Stacked-Gates for Area Saving or Noise Improvement in 3nm FinFET Process
    DOI
    Chu-En Hsia, Chin-Ho Chang, Yung-Shun Chen, Po-Yu Lai, Ching Lin Jen, Yung-Chow Peng, Shenggao Li
    TSMC
  21. VLSI
    2024
    MINOTAUR: An Edge Transformer Inference and Training Accelerator with 12 MBytes On-Chip Resistive RAM and Fine-Grained Spatiotemporal Power Gating
    DOI
    Kartik Prabhu, Robert M. Radway, Jeffrey Yu, Kai Bartolone, Massimo Giordano, Fabian Peddinghaus, Yonatan Urman, Win-San Khwa, Yu-Der Chih, Meng-Fan Chang, Subhasish Mitra, Priyanka Raina
    Stanford University · TSMC
  22. VLSI
    2023
    3.7-GHz Multi-Bank High-Current Single-Port Cache SRAM with 0.5V-1.4V Wide Voltage Range Operation in 3nm FinFET for HPC Applications
    DOI
    Yoshiaki Osada, Takaaki Nakazato, Koji Nii, Jhon-Jhy Liaw, Shien-Yang Michael Wu, Quincy Li, Hidehiro Fujiwara, Hung-Jen Liao, Tsung-Yung Jonathan Chang
    TSMC(日本拠点)TSMC Japan · TSMC
  23. VLSI
    2023
    A 2.38 MCells/mm2 9.81 -350 TOPS/W RRAM Compute-in-Memory Macro in 40nm CMOS with Hybrid Offset/IOFF Cancellation and ICELL RBLSL Drop Mitigation
    DOI
    Samuel D. Spetalnick, Muya Chang, Shota Konno, Brian Crafton, Ashwin S. Lele, Win-San Khwa, Yu-Der Chih, Meng-Fan Chang, Arijit Raychowdhury
    Georgia Institute of Technology · TSMC
  24. VLSI
    2023
    A 28nm Nonvolatile AI Edge Processor using 4Mb Analog-Based Near-Memory-Compute ReRAM with 27.2 TOPS/W for Tiny AI Edge Devices
    DOI
    Tai-Hao Wen, Je-Min Hung, Hung-Hsi Hsu, Yuan Wu, Fu-Chun Chang, Chung-Yuan Li, Chih-Han Chien, Chin-I Su, Win-San Khwa, Jui-Jen Wu, Chung-Chuan Lo, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea-Tiong Tang, Mon-Shu Ho, Yu-Der Chih, Tsung-Yung Jonathan Chang, Meng-Fan Chang
    National Tsing Hua University · TSMC · TSMC · National Chung Hsing University
  25. VLSI
    2023
    A 3-nm 27.6-Mbit/mm2 Self-timed SRAM Enabling 0.48 - 1.2 V Wide Operating Range with Far-end Pre-charge and Weak-Bit Tracking
    DOI
    Yumito Aoyagi, Makoto Yabuuchi, Tomotaka Tanaka, Yuichiro Ishii, Yoshiaki Osada, Takaaki Nakazato, Koji Nii, Isabel Wang, Yu-Hao Hsu, Hong-Chen Cheng, Hung-Jen Liao, Tsung-Yung Jonathan Chang
    TSMC(日本拠点)TSMC Japan · TSMC
  26. VLSI
    2023
    A 3nm 256Mb SRAM in FinFET Technology with New Array Banking Architecture and Write-Assist Circuitry Scheme for High-Density and Low-VMIN Applications
    DOI
    Jonathan Chang, Yen-Huei Chen, Gary Chan, Kuo-Cheng Lin, Po-Sheng Wang, Yangsyu Lin, Sevic Chen, Peijiun Lin, Ching-Wei Wu, Chih-Yu Lin, Yi-Hsin Nien, Hidehiro Fujiwara, Atul Katoch, Robin Lee, Hung-Jen Liao, Jhon-Jhy Liaw, Shien-Yang Michael Wu, Quincy Li
    TSMC
  27. VLSI
    2023
    A 4.24GHz 128X256 SRAM Operating Double Pump Read Write Same Cycle in 5nm Technology
    DOI
    Nick Zhang, Young Suk Kim, Peter Hsu, Samsoo Kim, Derek Tao, Hung-Jen Liao, P.W. Wang, Geoffrey Yeap, Quincy Li, Tsung-Yung Jonathan Chang
    TSMC
  28. VLSI
    2023
    How Fault-Tolerant Quantum Computing Benefits from Cryo-CMOS Technology
    DOI
    H.-L. Chiang, R. A. Hadi, J.-F. Wang, H.-C. Han, J.-J. Wu, H.-H. Hsieh, J.-J. Horng, W.-S. Chou, B.-S. Lien, C.-H. Chang, Y.-C. Chen, Y.-H. Wang, T.-C. Chen, J.-C. Liu, Y.-C. Liu, M.-H. Chiang, K.-H. Kao, B. Pulicherla, J. Cai, C.-S. Chang, K.-W. Su, K.-L. Cheng, T.-J. Yeh, Y.-C. Peng, C. Enz, M.-C. F. Chang, M.-F. Chang, H.-S. P. Wong, I. P. Radu
    TSMC · University of California, Los Angeles · École Polytechnique Fédérale de Lausanne · National Cheng Kung University
  29. VLSI
    2023
    Write-enhanced Single-ended 11T SRAM Enabling Single Bitcell Reconfigurable Compute-in-Memory Employing Complementary FETs
    DOI
    Wei-Xiang You, Cheng-Yin Wang, Yih Wang, Tsung-Yung Jonathan Chang, Szuya Sandy Liao
    TSMC
  30. VLSI
    2022
    A 12nm 121-TOPS/W 41.6-TOPS/mm2 All Digital Full Precision SRAM-based Compute-in-Memory with Configurable Bit-width For AI Edge Applications
    DOI
    Chia-Fu Lee, Cheng-Han Lu, Cheng-En Lee, Haruki Mori, Hidehiro Fujiwara, Yi-Chun Shih, Tan-Li Chou, Yu-Der Chih, Tsung-Yung Jonathan Chang
    TSMC
  31. VLSI
    2022
    A 135.6Tbps/W 2R2W SRAM with 12T Logic Bit-cell with Vmin Down to 335mV Targeted for Machine-Learning Applications in 6nm FinFET CMOS Technology
    DOI
    Nail Etkin Can Akkaya, Gary Chan, H.J. Liao, Yih Wang, Jonathan Chang
    TSMC · TSMC
  32. VLSI
    2022
    A 28-nm 25.1 TOPS/W Sparsity-Aware CNN-GCN Deep Learning SoC for Mobile Augmented Reality
    DOI
    Wen-Cong Huang, I-Ting Lin, Wen-Ching Chen, Liang-Yi Lin, Nian-Shyang Chang, Chun-Pin Lin, Chi-Shi Chen, Chia-Hsiang Yang
    National Taiwan University · TSMC
  33. VLSI
    2022
    Semiconductor Innovations, from Device to System
    DOI
    Yuh-Jier Mii
    TSMC