← Yonsei University

VLSI · 2022–2026 LIVE

Yonsei University

対象論文Papers 22 · 筆頭著者first author 17 · 著者按分fractional 13.33 · 韓国Korea #2 · 世界World #6

所属著者Affiliated authors

ORCID が一致する著者は同一人物としてまとめています。それ以外は表記ごとに別人として扱います。Authors sharing an ORCID are merged; other spellings are listed separately.

順位Rank著者Author論文数Papers
1Youngcheol Chae ORCID13
2Seong-Ook Jung ORCID4
2Taejune Jeon ORCID4
4Junghyun Yoon ORCID3
5Byungchoul Park ORCID2
5Dongseok Cho ORCID2
5Hee Young Kim2
5Heon-Jin Choi ORCID2
5Hyun-Seung Choi ORCID2
5Jeonghyeok You2
5Ji-Young Kim ORCID2
5Ju Young Lee2
5Keonhee Cho ORCID2
5Ki Jun Yu2
5Kyungmin Kang ORCID2
5Myung-Jae Lee ORCID2
5Sanghoon Lee2
5Seokho Yoon2
5Taeryeong Kim2
20Changuk Lee ORCID1
20Chanmin Park ORCID1
20Chanwoo Lee1
20Daerl Park1
20Danbi Ahn1
20Donggun Lee1
20Dongseok Seo1
20Doyoon Eom1
20Eunee Lee1
20Eunkyu Hwang1
20Eunsung Park1
20Giseok Kim ORCID1
20Hohyun Chae1
20Hoichang Jeong ORCID1
20Hyeonho Han ORCID1
20Hyunchul Yoon ORCID1
20Jaehyun Kim1
20Jang-Ung Park1
20Jisang Oh ORCID1
20Joo-Hyun Kim1
20Kiryong Kim ORCID1
20Kwanseo Park ORCID1
20Kyeongrim Baek1
20Kyoungseok Song1
20Kyuho Jason Lee ORCID1
20Minkyoung Yang1
20Sang Hoon Park1
20Sangho Rhee1
20Sekeon Kim ORCID1
20Seonghun Yang1
20Shinil Cho1
20Suhyeon Nam1
20Sun-woong Byun1
20Tae Wook Kim ORCID1
20Teawoong Kim1
20Won Gi Chung1
20Woo-Young Choi ORCID1
20Woojun Choi ORCID1
20Yerin Youn1
20Yigi Kwon ORCID1
20Yong Lim ORCID1
20Yoondeok Na ORCID1

対象論文Papers

  1. VLSI
    2026
    A 16-Channel Neural Recording IC with Spike-Driven Adaptive-Basis Compressive Sensing
    DOI
    Sanghoon Lee, Soohyun Yun, Seokho Yoon, Kyungmin Kang, Taejune Jeon, Sang Hoon Park, Ju Young Lee, Won Gi Chung, Jang-Ung Park, Ki Jun Yu, Joonsung Bae, Youngcheol Chae
    Yonsei University · Kangwon National University
  2. VLSI
    2026
    A 16.8-33.6 Gb/s, 0.93pJ/b Direct-Frequency-Tracking Digital CDR with an SSC Profile Replicator for Per-Lane Data-Rate Variation and High Jitter Tolerance Under Deep SSC
    DOI
    Jongwha Kim, Yongwoo Jo, Seongyun Min, Juntak Chun, Yuhwan Shin, Hyunjun Song, Seohyeon Kwak, Kwanseo Park, Jaehyouk Choi
    Seoul National University · Samsung · Yonsei University
  3. VLSI
    2026
    A 1MHz-BW 90.1dB-SNDR CT Zoom ADC with Mismatch Error Shaping Preserving Full-Scale Input Range
    DOI
    Junghyun Yoon, Zhaonan Lu, Yong Lim, Zhichao Tan, Youngcheol Chae
    Yonsei University · Zhejiang University
  4. VLSI
    2026
    A 256-Channel, 32-Interconnect, 1.25-NEF, in Vitro and In Vivo Neural Interface With Auto-Calibrated Input Impedance Boosting and on-Chip Spike Detection for Flexible Capacitive Microelectrode Array
    DOI
    Yiyang Chen, Suhyeon Nam, Sun-woong Byun, Pietro Velcich, Shinil Cho, Chanwoo Lee, Ju Young Lee, Sean Weaver, Enrico Brugnolotto, Eunkyu Hwang, Dongseok Seo, Eunee Lee, Ki Jun Yu, Woojun Choi, Taekwang Jang
    ETH Zurich · Yonsei University · Institut Català de Nanociència i Nanotecnologia
  5. VLSI
    2026
    A 3.25-Gb/S 0.74-pJ/bit IR-UWB Transmitter Using Edge-Reference Differential Phase Shift Keying (ER-DPSK)
    DOI
    Donggun Lee, Kyoungseok Song, Sangho Rhee, Tae Wook Kim
    Yonsei University
  6. VLSI
    2026
    A SPAD-Based iToF Flash LiDAR Sensor with a Coarse-Fine Operation Scheme Robust Against Strong Background Light
    DOI
    Dongseok Cho, Hyun-Seung Choi, Injun Park, Yoondeok Na, Seonghun Yang, Minkyoung Yang, Yerin Youn, Jimin Cheon, Myung-Jae Lee, Youngcheol Chae
    Yonsei University
  7. VLSI
    2026
    Back-Illuminated CMOS-SPAD with Full-Surround Anode Structure Achieving Sub-50 ps Timing Jitter for High-Precision Physical-AI Sensors
    DOI
    Joo-Hyun Kim, Doyoon Eom, Hyun-Seung Choi, Eunsung Park, Woo-Young Choi, Myung-Jae Lee
    Yonsei University
  8. VLSI
    2026
    HCNP: A 70.2 TOPS/W Hybrid CIM-NPU Processor with In-Streaming Processing for Energy-Efficient CNN/Transformer Acceleration in HMD
    DOI
    Seungbin Kim, Hoichang Jeong, Dongwook Kim, Jiwon Kim, Kyuho Jason Lee
    Ulsan National Institute of Science and Technology · Yonsei University
  9. VLSI
    2025
    A 10kHz-BW, 86.7dB-SNDR, 176.8dB-FoM, LNA-Embedded CT $\mathbf{\Delta}\mathbf{\Sigma}$ ADC for Closed-Loop Neural Recording
    DOI
    Sanghoon Lee, Junghyun Yoon, Taejune Jeon, Danbi Ahn, Soohyun Yun, Hee Young Kim, Joonsung Bae, Youngcheol Chae
    Yonsei University · Kangwon National University
  10. VLSI
    2025
    A 91.2dB-SNDR 250kHz-BW CT Zoom ADC Achieving a 6-Bit Linear Zoom-in with Interstage LPF and 1.5-Bit DAC
    DOI
    Junghyun Yoon, Youngcheol Chae
    Yonsei University
  11. VLSI
    2025
    A Fully Balanced Biphasic Neurostimulator with Body-Coupled Powering and Full-Duplex Communication Via Baseband Load Shift Keying
    DOI
    Taejune Jeon, Kyungmin Kang, Soohyun Yun, Seokho Yoon, Byeongseol Kim, Joonsung Bae, Youngcheol Chae
    Yonsei University · Kangwon National University
  12. VLSI
    2024
    A 30fps $\mathbf{64}\times \mathbf{64}$ CMOS Flash LiDAR Sensor with Push-Pull Analog Counter Achieving 0.1% Depth Uncertainty at 70m Detection Range
    DOI
    Dongseok Cho, Byungchoul Park, Hyun-Seung Choi, Myung-Jae Lee, Youngcheol Chae
    Yonsei University · Korea Institute of Science and Technology
  13. VLSI
    2024
    A 7.2inch 5.5Mpixel 600mW SPAD X-Ray Detector with 116.7 dB Dynamic Range
    DOI
    Byungchoul Park, Hyun-Seung Choi, Jinwoong Jeong, Jimin Cheon, Myung-Jae Lee, Youngcheol Chae
    Yonsei University · Korea Institute of Science and Technology · Kumoh National Institute of Technology
  14. VLSI
    2024
    A Wireless Neurostimulator Using Body-Coupled Link for Multisite Stimulation in Freely Behaving Animals
    DOI
    Taejune Jeon, Byeongseol Kim, Changuk Lee, Danbi Ahn, Daerl Park, Jaesuk Sung, Hee Young Kim, Heon-Jin Choi, Joonsung Bae, Youngcheol Chae
    Yonsei University · Kangwon National University · University of California, Berkeley · Daegu Haany University
  15. VLSI
    2023
    A 1024-Channel 268 nW/pixel 36x36 μm2/ch Data-Compressive Neural Recording IC for High-Bandwidth Brain-Computer Interfaces
    DOI
    MoonHyung Jang, Wei-Han Yu, Changuk Lee, Maddy Hays, Pingyu Wang, Nick Vitale, Pulkit Tandon, Pumiao Yan, Pui-In Mak, Youngcheol Chae, E.J. Chichilnisky, Boris Murmann, Dante G. Muratore
    Stanford University · University of Macau · Yonsei University · Delft University of Technology
  16. VLSI
    2023
    A 26.4mW, 18.6MS/s Image Reconstruction Processor for IoT Compressive Sensing
    DOI
    Yu-Cheng Lin, Chanmin Park, Wenda Zhao, Nan Sun, Youngcheol Chae, Chia-Hsiang Yang
    National Taiwan University · Yonsei University · The University of Texas at Austin · Tsinghua University
  17. VLSI
    2023
    A Highly-Digital PWM-Based Impedance Monitoring IC with 143.2dB DR and 17.7fFrms Resolution
    DOI
    Hyeonho Han, Woojun Choi, Jaehyun Kim, Jaesuk Sung, Heon-Jin Choi, Youngcheol Chae
    Yonsei University · ETH Zurich
  18. VLSI
    2023
    A Low-Voltage Area-Efficient TSV I/O for HBM with Data Rate up to 15Gb/s Featuring Overlapped Multiplexing Driver, ISI Compensators and QEC
    DOI
    Taeryeong Kim, Ji-Young Kim, Jeonghyeok You, Hohyun Chae, Byoung Mo Moon, Kyomin Sohn, Seong-Ook Jung
    Yonsei University · Samsung
  19. VLSI
    2023
    A Static Contention-Free Dual-Edge-Triggered Flip-Flop with Redundant Internal Node Transition Elimination for Ultra-Low-Power Applications
    DOI
    Sekeon Kim, Keonhee Cho, Kyeongrim Baek, Hyunjun Kim, Younmee Bae, Mijung Kim, Dongwook Seo, Sangyeop Baeck, Sungjae Lee, Seong-Ook Jung
    Yonsei University · Samsung
  20. VLSI
    2022
    A 14-nm Low Voltage SRAM with Charge-Recycling and Charge Self-Saving Techniques for Low-Power Applications
    DOI
    Keonhee Cho, Giseok Kim, Jisang Oh, Kiryong Kim, Changsu Sim, Younmee Bae, Mijung Kim, Sangyeop Baeck, Taejoong Song, Seong-Ook Jung
    Yonsei University · Samsung
  21. VLSI
    2022
    A 50 MS/s 65 dB-SNDR Pipelined SAR ADC using Capacitively Degenerated Two-Stage Dynamic Amplifier
    DOI
    Hyunchul Yoon, Teawoong Kim, Yigi Kwon, Youngcheol Chae
    Yonsei University · Samsung
  22. VLSI
    2022
    A Low Power TSV I/O with Data Rate up to 10 Gb/s for Next Generation HBM
    DOI
    Ji-Young Kim, Taeryeong Kim, Jeonghyeok You, Kiryong Kim, Byoung Mo Moon, Kyomin Sohn, Seong-Ook Jung
    Yonsei University · Samsung